Oxygen Vacancies Allow Tuning the Work Function of Vanadium Dioxide,Advanced Materials Interfaces

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Oxygen Vacancies Allow Tuning the Work Function of Vanadium Dioxide
Advanced Materials Interfaces ( IF 4.3 ) Pub Date : 2018-10-03 , DOI: 10.1002/admi.201801033
Rongbin Wang _{1,

2} , Takayoshi Katase _{3,

4} , Ke‐Ke Fu ₁ , Tianshu Zhai ₁ , Jiacheng Yang ₁ , Qiankun Wang ₂ , Hiromichi Ohta ₅ , Norbert Koch _{1,

2,

6} , Steffen Duhm ₁

Affiliation

The evolution of electron valence bands, core levels, and work function of vanadium dioxide (VO₂) thin films upon argon ion sputtering and annealing, as commonly done to obtain atomically clean surfaces, with and without low‐pressure oxygen atmosphere during annealing is investigated by ultraviolet and X‐ray photoemission spectroscopy. Both sputtering and annealing in vacuum introduce lower oxidation state V species, leading to an increased intensity of V 3d derived bands close to the Fermi level. Such oxygen deficient surfaces exhibit low work function values as low as 4.40 eV. Annealing the sample under low‐pressure oxygen atmosphere (few times 10⁻⁴ mbar partial O₂ pressure) results in stoichiometric VO₂ surfaces with a high work function of up to 6.70 eV. Moreover, the work function of the VO₂ can be continuously tuned between the high and low limits by adjusting the atomic ratio of oxygen and vanadium at the surface. Appropriately adjusted VO₂ can thus be employed as moderate electron as well as superior hole injecting electrode material in electronic and optoelectronic devices.

中文翻译：

氧气空缺可以调节二氧化钒的功函数

研究了在进行氩离子溅射和退火过程中，在有或没有低压氧气气氛下进行氩离子溅射和退火过程中，二价钒（VO ₂）薄膜的电子价带，核能级和功函数的演变。通过紫外和X射线光发射光谱法。溅射和真空退火均引入较低的氧化态V物种，从而导致V 3d衍生的能带接近费米能级的强度增加。这种缺氧表面表现出低至4.40 eV的低功函值。在低压氧气气氛下（几倍10 ^-4 mbar O _2分压）对样品进行退火会产生化学计量比VO ₂具有高达6.70 eV的高功函数的表面。此外，通过调节表面上的氧和钒的原子比，可以在上限和下限之间连续调节VO ₂的功函数。因此，可以将适当调节的VO ₂用作电子和光电子器件中的中等电子以及优良的空穴注入电极材料。

更新日期：2018-10-03

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