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Monolithically Integrated Perovskite Semiconductor Lasers on Silicon Photonic Chips by Scalable Top-Down Fabrication
Nano Letters ( IF 9.6 ) Pub Date : 2018-10-02 00:00:00 , DOI: 10.1021/acs.nanolett.8b02811
Piotr J. Cegielski 1 , Anna Lena Giesecke 1 , Stefanie Neutzner 2 , Caroline Porschatis 1 , Marina Gandini 2 , Daniel Schall 1 , Carlo A. R. Perini 2 , Jens Bolten 1 , Stephan Suckow 1 , Satender Kataria 3 , Bartos Chmielak 1 , Thorsten Wahlbrink 1 , Annamaria Petrozza 2 , Max C. Lemme 1, 3
Affiliation  

Metal-halide perovskites are promising lasing materials for the realization of monolithically integrated laser sources, the key components of silicon photonic integrated circuits (PICs). Perovskites can be deposited from solution and require only low-temperature processing, leading to significant cost reduction and enabling new PIC architectures compared to state-of-the-art lasers realized through the costly and inefficient hybrid integration of III−V semiconductors. Until now, however, due to the chemical sensitivity of perovskites, no microfabrication process based on optical lithography (and, therefore, on existing semiconductor manufacturing infrastructure) has been established. Here, the first methylammonium lead iodide perovskite microdisc lasers monolithically integrated into silicon nitride PICs by such a top-down process are presented. The lasers show a record low lasing threshold of 4.7 μJcm–2 at room temperature for monolithically integrated lasers, which are complementary metal–oxide–semiconductor compatible and can be integrated in the back-end-of-line processes.

中文翻译:

通过可扩展的自顶向下制造在硅光子芯片上的单片集成钙钛矿半导体激光器

金属卤化物钙钛矿是用于实现单片集成激光源(硅光子集成电路(PIC)的关键组件)的有前途的激光材料。钙钛矿可以从溶液中沉积出来,仅需低温处理,与通过III-V半导体的昂贵而低效的混合集成实现的最新激光器相比,可显着降低成本并启用新的PIC架构。然而,到目前为止,由于钙钛矿的化学敏感性,尚未建立基于光学光刻的微加工工艺(因此,尚未建立在现有的半导体制造基础设施上)。在此,提出了通过这种自顶向下的方法将第一甲基铵碘化铅钛矿钙钛矿微盘激光器单片集成到氮化硅PIC中。对于室温下为–2的单片集成激光器,它们与互补的金属-氧化物-半导体兼容,并且可以集成到生产线的后端过程中。
更新日期:2018-10-02
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