Piezoelectric organic–inorganic lead halide perovskites have recently attracted much attention in the field of optoelectronic devices. However, their piezoelectric properties as a possible way to modulate device performances have rarely been reported. Here, we study experimentally a photodetector based on CH₃NH₃PbI₃(MAPbI₃) single crystals, whose performance is effectively modulated via an emerging effect—the piezo-phototronic effect, which is to use the piezoelectric polarization charges to tune the optoelectronic processes at the interface. A piezoelectric coefficient of 10.81 pm/V of the CH₃NH₃PbI₃ single crystal is obtained. Under 680 nm laser illumination with a power density of 3.641 mW/cm² and at an external bias of 2 V, compared to the case without straining, the light current of the photodetector is enhanced by ∼120% when a 43.48 kPa compressive pressure is applied. The response speed of the photocurrent is 3 and 2 times faster than the cases without applying pressure for the light-on and light-off states, respectively. This work proves that the performance of the photodetector based on MAPbI₃ single crystals can be effectively enhanced by the piezo-phototronic effect, providing a good method for optimizing the performance of future perovskite-based optoelectronic devices.

中文翻译：

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基于CH ₃ NH ₃ PbI ₃单晶的压电光电效应增强光电探测器

压电有机-无机卤化铅钙钛矿最近在光电器件领域引起了广泛关注。但是，很少有关于压电性能作为调节器件性能的可能方法的报道。在这里，我们通过实验研究了基于CH光检测器₃ NH ₃碘化铅₃（MAPbI ₃）单晶，其性能被有效地调制经由一个新兴的效果-压电phototronic效果，这是使用压电极化电荷调光电接口上的进程。CH ₃ NH ₃ PbI _3的压电系数为10.81 pm / V获得单晶。与没有应变的情况相比，在功率密度为3.641 mW / cm ²且外部偏置为2 V的680 nm激光照射下，当压缩压力为43.48 kPa时，光电探测器的光电流提高了约120％。应用。与不对点亮状态和熄灭状态施加压力的情况相比，光电流的响应速度分别快3倍和2倍。这项工作证明，通过压电光电子效应可以有效地增强基于MAPbI ₃单晶的光电探测器的性能，为优化未来基于钙钛矿的光电器件的性能提供了一种很好的方法。