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Efficient hole transfer from monolayer WS2 to ultrathin amorphous black phosphorus†
Nanoscale Horizons ( IF 8.0 ) Pub Date : 2018-10-02 00:00:00 , DOI: 10.1039/c8nh00234g Matthew Z. Bellus 1, 2, 3, 4 , Zhibin Yang 5, 6, 7, 8 , Peymon Zereshki 1, 2, 3, 4 , Jianhua Hao 5, 6, 7, 8 , Shu Ping Lau 5, 6, 7, 8 , Hui Zhao 1, 2, 3, 4
Nanoscale Horizons ( IF 8.0 ) Pub Date : 2018-10-02 00:00:00 , DOI: 10.1039/c8nh00234g Matthew Z. Bellus 1, 2, 3, 4 , Zhibin Yang 5, 6, 7, 8 , Peymon Zereshki 1, 2, 3, 4 , Jianhua Hao 5, 6, 7, 8 , Shu Ping Lau 5, 6, 7, 8 , Hui Zhao 1, 2, 3, 4
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The newly developed van der Waals materials allow fabrication of multilayer heterostructures. Early efforts have mostly focused on heterostructures formed by similar materials. More recently, however, attempts have been made to expand the types of materials, such as topological insulators and organic semiconductors. Here we introduce an amorphous semiconductor to the material library for constructing van der Waals heterostructures. Samples composed of 2 nm amorphous black phosphorus synthesized by pulsed laser deposition and monolayer WS2 obtained by mechanical exfoliation were fabricated by dry transfer. Photoluminescence measurements revealed that photocarriers excited in WS2 of the heterostructure transfer to amorphous black phosphorus, in the form of either energy or charge transfer, on a time scale shorter than the exciton lifetime in WS2. Transient absorption measurements further indicate that holes can efficiently transfer from WS2 to amorphous black phosphorus. However, interlayer electron transfer in either direction was found to be absent. The lack of electron transfer from amorphous black phosphorus to WS2 is attributed to the localized electronic states in the amorphous semiconductor. Furthermore, we show that a hexagonal BN bilayer can effectively change the hole transfer process.
中文翻译：
从单层WS 2到超薄无定形黑磷的有效空穴转移†
新开发的范德华材料可以制造多层异质结构。早期的努力主要集中在由相似材料形成的异质结构上。然而，最近，已经尝试扩展诸如拓扑绝缘体和有机半导体之类的材料的类型。在这里，我们将非晶半导体引入材料库中，以构建范德华异质结构。通过干式转移制备由脉冲激光沉积合成的2 nm非晶态黑磷和通过机械剥落获得的单层WS 2组成的样品。光致发光测量表明，在WS 2中激发了光载流子以短于WS 2的激子寿命的时间尺度，以能量或电荷转移的形式将异质结构转移至无定形黑磷的过程。瞬态吸收测量结果进一步表明，空穴可以有效地从WS 2转移到无定形黑磷。然而，发现在任一方向上都没有层间电子转移。从非晶态黑磷到WS 2的电子转移的缺乏归因于非晶态半导体中的局部电子态。此外，我们表明六角形BN双层可以有效地改变空穴传输过程。
更新日期：2018-10-02
中文翻译：
从单层WS 2到超薄无定形黑磷的有效空穴转移†
新开发的范德华材料可以制造多层异质结构。早期的努力主要集中在由相似材料形成的异质结构上。然而，最近，已经尝试扩展诸如拓扑绝缘体和有机半导体之类的材料的类型。在这里，我们将非晶半导体引入材料库中，以构建范德华异质结构。通过干式转移制备由脉冲激光沉积合成的2 nm非晶态黑磷和通过机械剥落获得的单层WS 2组成的样品。光致发光测量表明，在WS 2中激发了光载流子以短于WS 2的激子寿命的时间尺度，以能量或电荷转移的形式将异质结构转移至无定形黑磷的过程。瞬态吸收测量结果进一步表明，空穴可以有效地从WS 2转移到无定形黑磷。然而，发现在任一方向上都没有层间电子转移。从非晶态黑磷到WS 2的电子转移的缺乏归因于非晶态半导体中的局部电子态。此外，我们表明六角形BN双层可以有效地改变空穴传输过程。
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