Abstract A new Pb-free Ag paste containing a Bi2O3-B2O3-ZnO glass frit was developed for Al2O3 substrate metallization. First, Bi2O3-B2O3-ZnO glass frits with various compositions and glass transition temperatures (Tg) of 322 °C–440 °C were synthesized by using a traditional melt-quenching method. Then, silver pastes containing different contents of the glass frit were sintered on an Al2O3 substrate at temperatures ranging from 450 °C to 600 °C. The glass frit content and the sintering temperature had significant impacts on the electrical resistivity and shear strength of the product. The experimental results indicated that the silver film formed from the paste containing 7 wt.% glass frit and sintered at 600 °C for 15 min had a low electrical resistivity of 2.5 μΩ cm and a high strength of 28.5 MPa. These properties resulted from the formation of a stable glass network that supported the Ag network. Furthermore, ZnAl2O4 was observed to form close to the interface of the Al2O3 substrate, which could improve the shear strength. Moreover, the Bi-based glass frit could be a suitable substitute for Pb-based glass frits in the preparation of environmentally friendly silver pastes for forming thick Ag films on Al2O3 substrates.

中文翻译：

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通过低温烧结含有 Bi2O3-B2O3-ZnO 玻璃料的银浆形成高导电厚膜

摘要 开发了一种含有 Bi2O3-B2O3-ZnO 玻璃料的新型无铅银浆，用于 Al2O3 衬底金属化。首先，采用传统的熔融淬火方法合成了具有各种成分和玻璃化转变温度 (Tg) 为 322 °C–440 °C 的 Bi2O3-B2O3-ZnO 玻璃料。然后，在 450 °C 至 600 °C 的温度范围内，将含有不同玻璃料含量的银浆烧结在 Al2O3 基材上。玻璃料含量和烧结温度对产品的电阻率和剪切强度有显着影响。实验结果表明，由含有 7 wt.% 玻璃料的浆料在 600 °C 下烧结 15 分钟形成的银膜具有 2.5 μΩ cm 的低电阻率和 28.5 MPa 的高强度。这些特性是由于形成了支持 Ag 网络的稳定玻璃网络。此外，观察到 ZnAl2O4 形成靠近 Al2O3 基板的界面，这可以提高剪切强度。此外，Bi 基玻璃料可以作为 Pb 基玻璃料的合适替代品，用于制备环保银浆，用于在 Al2O3 基板上形成厚银膜。