PbS Capped CsPbI3 Nanocrystals for Efficient and Stable Light-Emitting Devices Using p-i-n Structures.,ACS Central Science

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PbS Capped CsPbI3 Nanocrystals for Efficient and Stable Light-Emitting Devices Using p-i-n Structures.
ACS Central Science ( IF 12.7 ) Pub Date : 2018-09-26 , DOI: 10.1021/acscentsci.8b00386
Xiaoyu Zhang _{1,

2} , Min Lu ₁ , Yu Zhang ₁ , Hua Wu ₁ , Xinyu Shen ₁ , Wei Zhang ₂ , Weitao Zheng ₂ , Vicki L Colvin ₃ , William W Yu _{1,

4}

Affiliation

Cesium lead halide perovskite nanocrystals (NCs) have unique optical properties such as high color purity and high photoluminescence (PL) efficiency. However, the external quantum efficiency (EQE) of the corresponding light-emitting diodes (LEDs) is low, primarily as a result of the NC surface defects. Here, we report a method to reduce the surface defects by capping CsPbI3 NCs with PbS. This passivation significantly enhanced the PL efficiency, reduced the Stokes shift, narrowed the PL bandwidth, and increased the stability of CsPbI3 NCs. At the same time, CsPbI3 NC films switched from n-type behavior to nearly ambipolar by PbS capping, which allowed us to fabricate electroluminescence LEDs using p-i-n structures. The thus-fabricated LEDs exhibited dramatically improved storage and operation stability, and an EQE of 11.8%. These results suggest that, with a suitable surface passivation strategy, the perovskite NCs are promising for next-generation LED and display applications.

中文翻译：

PbS封端的CsPbI3纳米晶体，用于使用引脚结构的高效且稳定的发光器件。

卤化铯铅钙钛矿纳米晶体（NCs）具有独特的光学特性，例如高色纯度和高光致发光（PL）效率。然而，主要由于NC表面缺陷的结果，相应的发光二极管（LED）的外部量子效率（EQE）较低。在这里，我们报告了一种通过用PbS覆盖CsPbI3 NC来减少表面缺陷的方法。这种钝化显着提高了PL效率，降低了Stokes位移，缩小了PL带宽，并提高了CsPbI3 NC的稳定性。同时，CsPbI3 NC薄膜通过PbS封盖从n型行为转变为几乎双极性，这使我们能够使用引脚结构来制造电致发光LED。如此制造的LED显示出显着改善的存储和操作稳定性，并且EQE为11.8％。

更新日期：2018-09-26

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