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Hydrogen sensing performance of a Pd/HfO2/GaOx/GaN based metal-oxide-semiconductor type Schottky diode
International Journal of Hydrogen Energy ( IF 8.1 ) Pub Date : 2018-09-25 , DOI: 10.1016/j.ijhydene.2018.08.213
Ching-Hong Chang , Kun-Wei Lin , Hsin-Hau Lu , Rong-Chau Liu , Wen-Chau Liu

An interesting hydrogen sensor based on a Pd/HfO2/GaOx/GaN metal-oxide-semiconductor (MOS) structure is fabricated and demonstrated. The HfO2 and GaOx layers are prepared using a sputtering approach and hydrogen peroxide (H2O2) treatment. The hydrogen sensing characteristics of the studied device are comprehensively studied. Experimentally, good hydrogen sensing characteristics, including a high sensing response of 8.47 × 105, a low detection level of 5 ppm H2/air, and reversible, short response and recovery times upon exposure to different hydrogen concentrations and temperatures are obtained. The influence of humidity on hydrogen sensing performance is also studied. The exothermic action of the hydrogen adsorption process leads to a decreased hydrogen sensing response at higher temperatures. Consequently, the studied Pd/HfO2/GaOx/GaN MOS diode is promising for high-performance hydrogen sensing applications and integration with other GaN-based high-speed devices on a chip.



中文翻译:

Pd / HfO 2 / GaO x / GaN基金属氧化物半导体型肖特基二极管的氢感测性能

制造并展示了一种基于Pd / HfO 2 / GaO x / GaN金属氧化物半导体(MOS)结构的有趣的氢传感器。使用溅射方法和过氧化氢(H 2 O 2)处理来制备HfO 2和GaO x层。对所研究装置的氢感测特性进行了综合研究。实验上,良好的氢感测特性,包括8.47×10 5的高感测响应,5 ppm H 2的低检测水平/空气,并且在暴露于不同的氢气浓度和温度下可获得可逆的,短的响应和恢复时间。还研究了湿度对氢感测性能的影响。氢吸附过程的放热作用导致在较高温度下氢感测响应降低。因此,所研究的Pd / HfO 2 / GaO x / GaN MOS二极管有望用于高性能氢感测应用以及与芯片上其他基于GaN的高速器件的集成。

更新日期:2018-09-25
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