Cuprous complexes are considered as promising alternatives to phosphorescent Ir complexes in the applications of electroluminescent devices in recent years. In addition, the co-deposition route is a common synthesis method using Cu(I) halide and organic materials to generate a Cu(I) complex as an emitter of organic light-emitting diodes (OLEDs). In the research presented here, we investigated the photoluminescence (PL) characteristics of Cu(I) complexes co-deposited by aza-9,9′- spirobifluorene and CuX (X = Cl, Br, I) at different doping concentrations. We found that the CuCl, CuBr, and CuI with a molar ratio respectively at 7%, 7%, and 9% exhibited higher PL quantum yields and external quantum yield, and CuBr as a doping halide showed the best performance. We then systematically investigated the complexes in response to external stimulation (water, oxygen and thermal annealing, operation voltage). The results exhibit obvious phase decomposition with increasing annealing temperature, exposure time, and applied voltage. Finally, we conclude that the co-deposited Cu(I) complexes are vulnerable to external stimulation. Based on this work, employing co-deposited Cu(I) complexes as an emitter is a suitable way to fabricate high-efficiency and stable OLED that merits further research.

近年来，在电致发光器件的应用中，亚铜配合物被认为是磷光Ir配合物的有希望的替代物。另外，共沉积路线是使用卤化铜（I）和有机材料来生成铜（I）配合物作为有机发光二极管（OLED）的发射体的常见合成方法。在这里提出的研究中，我们研究了由aza-9,9'-螺双芴和Cu X（X ＝ Cl，Br，I）在不同的掺杂浓度下。我们发现摩尔比分别为7％，7％和9％的CuCl，CuBr和CuI表现出更高的PL量子产率和外部量子产率，而作为掺杂卤化物的CuBr表现出最好的性能。然后，我们系统地研究了响应外部刺激（水，氧气和热退火，操作电压）的配合物。结果表明，随着退火温度，暴露时间和施加电压的增加，相分解明显。最后，我们得出结论，共沉积的Cu（I）络合物容易受到外部刺激。基于这项工作，采用共沉积的Cu（I）配合物作为发射极是制造高效且稳定的OLED的合适方法，值得进一步研究。