Abstract β-SiC nanowires (NWs) have been successfully synthesized in the absence of Ar gas protection by a simple, catalyst-free chemical vapour deposition (CVD) using silicon, trace nanoscale SiO2 particles, and phenolic resin powders as starting materials. The β-SiC NWs formed by a vapour-solid growth mechanism, with growth along the [1 1 1] direction. They were well-crystallized, with various morphologies (chain-bead, bamboo-shaped, and linear), and had lengths of up to dozens of microns and diameters of 80–650 nm. Moreover, they exhibited excellent blue-green photoluminescence properties due to the presence of stacking faults and amorphous SiO2. This novel CVD technique is green, low cost, and suitable for large scale production of SiC NWs.

中文翻译：

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通过简单的无催化剂 CVD 技术合成蓝绿色光致发光 β-SiC 纳米线

摘要 β-SiC 纳米线 (NWs) 在没有 Ar 气体保护的情况下，通过使用硅、微量纳米级 SiO2 颗粒和酚醛树脂粉末作为起始材料，通过简单的无催化剂化学气相沉积 (CVD) 成功合成。β-SiC 纳米线通过气固生长机制形成，沿 [1 1 1] 方向生长。它们结晶良好，具有各种形态（链珠状、竹状和线状），长度可达数十微米，直径为 80-650 纳米。此外，由于存在堆垛层错和非晶SiO2，它们表现出优异的蓝绿色光致发光性能。这种新颖的 CVD 技术是绿色的、成本低的，适合大规模生产 SiC 纳米线。