The research of ultraviolet photodetectors (UV PDs) have been attracting extensive attention, due to their important applications in many areas. In this study, PtSe₂/GaN heterojunction is in-situ fabricated by synthesis of large-area vertically standing two-dimensional (2D) PtSe₂ film on n-GaN substrate. The PtSe₂/GaN heterojunction device demonstrates excellent photoresponse properties under illumination by deep UV light of 265 nm at zero bias voltage. Further analysis reveals that a high responsivity of 193 mA·W^–1, an ultrahigh specific detectivity of 3.8 × 10¹⁴ Jones, linear dynamic range of 155 dB and current on/off ratio of ~ 108, as well as fast response speeds of 45/102 μs were obtained at zero bias voltage. Moreover, this device response quickly to the pulse laser of 266 nm with a rise time of 172 ns. Such high-performance PtSe₂/GaN heterojunction UV PD demonstrated in this work is far superior to previously reported results, suggesting that it has great potential for deep UV detection.

中文翻译：

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具有超高电流开/关比和检测能力的自供电深紫外光电探测器的PtSe 2 / GaN异质结的原位制备

紫外线光电探测器（UV PDs）的研究由于其在许多领域的重要应用而引起了广泛的关注。在这项研究中，PtSe ₂ / GaN异质结是通过在n-GaN衬底上合成大面积垂直站立的二维（2D）PtSe ₂膜而原位制造的。PtSe ₂ / GaN异质结器件在零偏置电压下被265 nm的深紫外光照射下表现出出色的光响应特性。进一步的分析表明，它具有193 mA·W ^–1的高响应度，3.8×10 ¹⁴的超高比检测率在零偏置电压下获得的Jones线性动态范围为155 dB，电流开/关比为〜108，以及快速响应速度为45/102μs。此外，该器件对266 nm脉冲激光的响应速度很快，上升时间为172 ns。在这项工作中展示的这种高性能PtSe ₂ / GaN异质结UV PD远远优于先前报道的结果，这表明它在深度UV检测中具有巨大的潜力。