Graphene is considered to be the most likely candidate for the postsilicon era; however, the problem with its zero band gap is challenging to overcome. A close relative of silicon, silicon carbide is expected to have a stable 2D polymorph which happens to be a wide-gap semiconductor. Unfortunately, the so-called silagraphene has proven to be elusive. To date, neither theoretical nor experimental studies have been conclusive. Here, we employ computational methods to determine the stable arrangements of silagraphene and establish their accurate band structure. We also experimentally validate our models by preparing and characterizing a number of graphitic features. Silagraphene exhibits a wide spectrum of optoelectronic properties (360–690 nm) as well as an unusual band structure with highly anisotropic transport properties, which originates from its nondispersive band near its K-point. This feature makes direct-indirect gap crossover extremely sensitive to ambient conditions, making silagraphene suitable for a range of sensors.

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石墨碳化硅（硅石墨烯）是否稳定？

石墨烯被认为是后硅时代最有可能的候选者。然而，其零带隙问题难以克服。碳化硅的硅的近亲有望具有稳定的2D多晶型物，它恰好是宽间隙半导体。不幸的是，事实证明所谓的硅石墨烯是难以捉摸的。迄今为止，无论是理论研究还是实验研究都不是结论性的。在这里，我们采用计算方法确定硅石墨烯的稳定排列并建立其精确的能带结构。我们还通过准备和表征许多石墨特征，通过实验验证了我们的模型。硅石墨烯具有广谱的光电特性（360-690 nm）以及具有高各向异性传输特性的不寻常的能带结构，它来自其K点附近的非色散带。此功能使直接-间接间隙交叉对环境条件极为敏感，从而使硅石墨烯适用于各种传感器。