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Surface-Treated Poly(dimethylsiloxane) as a Gate Dielectric in Solution-Processed Organic Field-Effect Transistors
ACS Omega ( IF 4.1 ) Pub Date : 2018-09-17 00:00:00 , DOI: 10.1021/acsomega.8b01629
Reshma Raveendran 1 , Manoj A. G. Namboothiry 1
Affiliation  

Poly(dimethylsiloxane) (PDMS) is a transparent and flexible elastomer which has a myriad of applications in various fields including organic electronics. However, the inherent hydrophobic nature and low surface energy of PDMS prevent its direct use in many applications. It is seldom utilized as a gate dielectric in solution-processed organic field effect transistors (OFETs). In this work, we demonstrate a simple method, extended ultraviolet–ozone (UVO) treatment, to modify the PDMS surface and effectively employ it in solution-processed OFETs as a gate dielectric material. The modified PDMS surface shows enhanced wettability and adherence to both polar and nonpolar liquids, which is contrary to the generally observed hydrophilic nature of UVO-treated PDMS surfaces because of the creation of polar functional groups. The morphological changes happening on the PDMS surface as a result of extended UVO treatment play a major role in making the surface suitable for all type of solvents discussed here. The contact angle measurements are used to give qualitative evidence for this observation. The modified PDMS is then used as a gate dielectric in solution-processed n- and p-channel OFETs using [6,6]-phenyl-C61-butyric acid methyl ester (PC60BM) and regioregular poly(3-hexylthiophene) (rr-P3HT) semiconductors, respectively.

中文翻译:

表面处理的聚二甲基硅氧烷作为溶液处理的有机场效应晶体管中的栅极电介质

聚(二甲基硅氧烷)(PDMS)是一种透明且柔软的弹性体,在包括有机电子学在内的各个领域都有众多应用。但是,PDMS固有的疏水性和低表面能阻止了它在许多应用中的直接使用。很少将其用作溶液处理的有机场效应晶体管(OFET)中的栅极电介质。在这项工作中,我们演示了一种简单的方法,即扩展的紫外线-臭氧(UVO)处理,以修改PDMS表面并将其有效地用于固溶OFET中作为栅极电介质材料。改性的PDMS表面显示出增强的润湿性以及对极性和非极性液体的粘附性,这与UVO处理过的PDMS表面通常观察到的亲水性相反,因为它会形成极性官能团。延长UVO处理后,PDMS表面发生的形态变化在使表面适合此处讨论的所有类型的溶剂中起着重要作用。接触角的测量结果可以为这种观察提供定性证据。然后使用[6,6]-苯基-C61-丁酸甲酯(PC)在溶液处理的n通道和p通道OFET中将改性的PDMS用作栅极电介质60 BM)和区域规则的聚(3-己基噻吩)(rr-P3HT)半导体。
更新日期:2018-09-17
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