Abstract A broadband tunable absorber is studied based on the silicon metasurface at terahertz frequencies. By tuning the conductivity of silicon, absorptance is more than 90% from 0.497 THz to 1.045 THz with central frequency of 0.771 THz when the conductivity is equal to 2500 S / m . Simulated results show that absorptance peak can be modulated from 1% to 100% when the conductivity continuously changes from 0 S / m to 2500 S / m . The central-symmetry structure leads to polarization independence. Our design may be used as optoelectronic modulator, tunable detector, and terahertz switch.

中文翻译：

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基于各向同性硅超表面的太赫兹波宽带可调吸收器

摘要 研究了一种基于太赫兹频率的硅超表面的宽带可调吸收器。通过调整硅的电导率，当电导率等于 2500 S / m 时，从 0.497 THz 到 1.045 THz 的吸收率超过 90%，中心频率为 0.771 THz。模拟结果表明，当电导率从 0 S/m 连续变化到 2500 S/m 时，吸收峰可以从 1% 调制到 100%。中心对称结构导致极化独立。我们的设计可用作光电调制器、可调探测器和太赫兹开关。