Vertically aligned Zinc oxide nanorods (ZnO NRs) were successfully synthesized in this study using the sonochemical method to improve the intrinsic properties of UV photodetector (PD). Three different thin films: Ti/Zn, Ti/ZnO, and Ti/ZnO/Zn, with the thicknesses of 10 nm/55 nm, 10 nm/85 nm, and 10 nm/85 nm/55 nm respectively, were deposited on glass substrates using the RF-sputtering technique. The synthesized ZnO NRs were investigated using XRD, FESEM and Raman spectroscopy to determine the effect of Zn and ZnO as seed layers, and ZnO as a buffer layer on the surface morphology, crystal structure, optical properties of ZnO NRs. The ZnO NRs grown on Zn/Ti, ZnO/Ti, and Zn/ZnO/Ti are characterized by hexagonal crystal structure with preferential growth in the c-axis direction. The ZnO NRs grown on Zn/ZnO/Ti displayed the highest density, uniform size distribution, vertically aligned rods and aspect ratio. The UV device fabricated from the ZnO NRs grown on Zn /ZnO/Ti also showed the highest photocurrent (360 µA) and responsivity of (878 mA/W). ZnO NRs grown on Zn/ZnO/Ti were also observed to be highly stable and exhibited a relatively rapid response and recovery times for different time intervals when exposed to the UV light of 365 nm wavelength. Thus, the inclusion of the ZnO as a buffer layer (Zn as a seed layer/ZnO as buffer layer/Ti as a buffer layer) improve the properties of the ZnO NRs. In addition, the current gain of ZnO NRs grown on Zn (55 nm)/ZnO (85 nm)/Ti (10 nm) - based ultraviolet (UV) photodetector (PD) is about two times higher than that of conventional Zn (55 nm)/ZnO (85 nm)/Ti (10 nm) thin-films UV PD, which is due to the higher surface-to-volume ratio of ZnO nanorods (NRs) compared with their thin films. This study confirms the possibility of sonochemically fabricating vertically aligned ZnO nanorods as well as its applicability as a viable UV photodetector.

在本研究中，使用声化学方法成功地合成了垂直排列的氧化锌纳米棒（ZnO NRs），以改善紫外光电探测器（PD）的固有特性。分别沉积厚度分别为10 nm / 55 nm，10 nm / 85 nm和10 nm / 85 nm / 55 nm的三种不同的薄膜：Ti / Zn，Ti / ZnO和Ti / ZnO / Zn。使用RF溅射技术的玻璃基板。用XRD，FESEM和拉曼光谱法研究了合成的ZnO NRs，以确定Zn和ZnO作为籽晶层以及ZnO作为缓冲层对ZnO NRs表面形貌，晶体结构和光学性能的影响。在Zn / Ti，ZnO / Ti和Zn / ZnO / Ti上生长的ZnO NRs具有六方晶体结构，并在c轴方向优先生长。在Zn / ZnO / Ti上生长的ZnO NRs表现出最高的密度，尺寸分布均匀，垂直对齐的杆和长宽比。由生长在Zn / ZnO / Ti上的ZnO NR制成的UV装置也显示出最高的光电流（360 µA）和最高的响应度（878 mA / W）。当暴露于365 nm波长的紫外线时，还观察到在Zn / ZnO / Ti上生长的ZnO NRs高度稳定，并且在不同的时间间隔内表现出相对较快的响应和恢复时间。因此，包含ZnO作为缓冲层（Zn作为种子层/ ZnO作为缓冲层/ Ti作为缓冲层）改善了ZnO NR的性能。此外，在基于Zn（55 nm）/ ZnO（85 nm）/ Ti（10 nm）的紫外（UV）光电探测器（PD）上生长的ZnO NR的电流增益约为传统Zn（55）的两倍。 nm）/ ZnO（85 nm）/ Ti（10 nm）薄膜UV PD，这是由于ZnO纳米棒（NRs）与薄膜相比具有更高的表面体积比。这项研究证实了超声化学制造垂直排列的ZnO纳米棒的可能性以及其作为可行的紫外线光电探测器的适用性。