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Interfacial Defect Vibrations Enhance Thermal Transport in Amorphous Multilayers with Ultrahigh Thermal Boundary Conductance
Advanced Materials ( IF 27.4 ) Pub Date : 2018-09-17 , DOI: 10.1002/adma.201804097
Ashutosh Giri 1 , Sean W. King 2 , William A. Lanford 3 , Antonio B. Mei 2 , Devin Merrill 2 , Liyi Li 2 , Ron Oviedo 2 , John Richards 2 , David H. Olson 1 , Jeffrey L. Braun 1 , John T. Gaskins 1 , Freddy Deangelis 4 , Asegun Henry 4, 5 , Patrick E. Hopkins 1
Affiliation  

The role of interfacial nonidealities and disorder on thermal transport across interfaces is traditionally assumed to add resistance to heat transfer, decreasing the thermal boundary conductance (TBC). However, recent computational studies have suggested that interfacial defects can enhance this thermal boundary conductance through the emergence of unique vibrational modes intrinsic to the material interface and defect atoms, a finding that contradicts traditional theory and conventional understanding. By manipulating the local heat flux of atomic vibrations that comprise these interfacial modes, in principle, the TBC can be increased. In this work, experimental evidence is provided that interfacial defects can enhance the TBC across interfaces through the emergence of unique high‐frequency vibrational modes that arise from atomic mass defects at the interface with relatively small masses. Ultrahigh TBC is demonstrated at amorphous SiOC:H/SiC:H interfaces, approaching 1 GW m−2 K−1 and are further increased through the introduction of nitrogen defects. The fact that disordered interfaces can exhibit such high conductances, which can be further increased with additional defects, offers a unique direction to manipulate heat transfer across materials with high densities of interfaces by controlling and enhancing interfacial thermal transport.

中文翻译:

界面缺陷振动增强了具有超高热边界电导率的非晶态多层中的热传输。

传统上认为界面非理想性和无序性对跨界面热传输的作用会增加传热阻力,从而降低热边界电导(TBC)。但是,最近的计算研究表明,界面缺陷可以通过材料界面和缺陷原子固有的独特振动模式的出现来增强这种热边界传导,这一发现与传统理论和常规理解相矛盾。通过操纵包含这些界面模式的原子振动的局部热通量,原则上可以提高TBC。在这项工作中,实验证据表明,界面缺陷可以通过出现独特的高频振动模式而增强整个界面的TBC,该振动模式是由质量相对较小的界面处的原子质量缺陷引起的。超高TBC在无定形SiOC:H / SiC:H界面处得到证明,接近1 GW m-2 K -1和通过引入氮缺陷而进一步增加。无序界面可以表现出如此高的电导率这一事实,可以通过增加额外的缺陷而进一步增加,这一事实为控制和增强界面热传递提供了一种独特的方向,以控制高密度界面材料之间的传热。
更新日期:2018-09-17
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