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Chemical Vapor Deposition Grown Wafer‐Scale 2D Tantalum Diselenide with Robust Charge‐Density‐Wave Order
Advanced Materials ( IF 27.4 ) Pub Date : 2018-09-14 , DOI: 10.1002/adma.201804616
Jianping Shi 1, 2, 3, 4 , Xuexian Chen 5 , Liyun Zhao 1 , Yue Gong 6, 7 , Min Hong 1, 2 , Yahuan Huan 1, 2, 8 , Zhepeng Zhang 1, 2 , Pengfei Yang 1, 2 , Yong Li 8 , Qinghua Zhang 6 , Qing Zhang 1 , Lin Gu 4, 6, 7 , Huanjun Chen 5 , Jian Wang 3, 4, 9 , Shaozhi Deng 5 , Ningsheng Xu 5 , Yanfeng Zhang 1, 2
Affiliation  

2D metallic transition metal dichalcogenides (MTMDCs) are benchmark systems for uncovering the dimensionality effect on fascinating quantum physics, such as charge‐density‐wave (CDW) order, unconventional superconductivity, and magnetism, etc. However, the scalable and thickness‐tunable syntheses of such envisioned MTMDCs are still challenging. Meanwhile, the origin of CDW order at the 2D limit is controversial. Herein, the direct synthesis of wafer‐scale uniform monolayer 2H‐TaSe2 films and thickness‐tunable flakes on Au foils by chemical vapor deposition is accomplished. Based on the thickness‐tunable 2H‐TaSe2, the robust periodic lattice distortions that relate to CDW orders by low‐temperature transmission electron microscopy are directly visualized. Particularly, a phase diagram of the transition temperature from normal metallic to CDW phases with thickness by variable‐temperature Raman characterizations is established. Intriguingly, dramatically enhanced transition temperature from bulk value ≈90 to ≈125 K is observed from monolayer 2H‐TaSe2, which can be explained by the enhanced electron–phonon coupling mechanism. More importantly, an ultrahigh specific capacitance is also obtained for the as‐grown TaSe2 on carbon cloth as supercapacitor electrodes. The results hereby open up novel avenues toward the large‐scale preparation of high‐quality MTMDCs, and shed light on their applications in exploring some fundamental issues.

中文翻译:

化学气相沉积生长的晶圆级2D二硒化钽,具有稳健的电荷密度-波度顺序

二维金属过渡金属二硫化碳(MTMDC)是基准系统,用于揭示引人入胜的量子物理学的维度效应,例如电荷密度波(CDW)阶,非常规超导性和磁性等。然而,可扩展且可厚度可调的合成如此设想的MTMDC仍然具有挑战性。同时,CDW指令在2D极限处的起源是有争议的。在此,通过化学气相沉积法直接在金箔上合成了晶圆级均匀的单层2H-TaSe 2薄膜和厚度可调的薄片。基于厚度可调的2H-TaSe 2,直接可视化了由低温透射电子显微镜观察到的与CDW阶相关的稳健的周期性晶格畸变。特别地,通过可变温度拉曼表征,建立了从正常金属相到CDW相的转变温度随厚度变化的相图。有趣的是,从单层2H-TaSe 2观察到从本体值≈90到≈125K的跃迁温度显着提高,这可以用增强的电子-声子耦合机理来解释。更重要的是,还为成批的TaSe 2获得了超高的比电容在碳布上作为超级电容器电极。因此,结果为大规模准备高质量MTMDC开辟了新途径,并阐明了它们在探索一些基本问题中的应用。
更新日期:2018-09-14
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