We report on magnetism, charge transport, dielectric properties and specific heat of Ce_1−xSb_xO₂ ceramics sintered at 1650 ^∘C with a final antimony content of 0 ≤ x ≤ 0.0017. In contrast to other donor dopants, such as Nb, Ta, U and W, charge compensation of antimony in Ce_1−xSb_xO₂ does not involve the formation of the Ce³⁺ ions as revealed by the magnetic susceptibility data. Therefore, we conclude that antimony is mainly present as Sb³⁺ ion and acts as an acceptor dopant in Ce_1−xSb_xO₂. This conclusion is also supported by a very low electrical conductivity of the Sb-doped ceria that shows an activation energy E_σ ∼ 0.97 eV. This activation energy is close to that observed in oxygen conducting acceptor-doped ceria and is significantly higher than the typical E_σ ∼ 0.1–0.3 eV values reported for n-type CeO₂. Below 10 K, both an anomaly in the dielectric loss and a small specific heat surplus in Sb-doped ceria indicate a low-energy dipolar relaxation probably associated with a local dynamics of the off-centered Sb³⁺ point defects.

我们对磁性，电荷传输，介电性能和比热的Ce报告_{1- X} Sb的_X Ò _2个陶瓷在1650烧结 ^∘下以0≤最终锑含量 X  ≤0.0017。与其他供体掺杂剂（例如Nb，Ta，U和W）相反，Ce _{1- x} Sb _x O ₂中的锑电荷补偿不涉及Ce ³⁺离子的形成，如磁化率数据所示。因此，我们得出结论，锑主要以Sb ³⁺离子的形式存在，并在Ce _{1− x} Sb _x O中充当受体掺杂剂。₂。这个结论也由锑掺杂的氧化铈的是示出了活化能的非常低的导电性支持Ë _σ  〜0.97电子伏特。此活化能接近于在氧观察导电受主掺杂二氧化铈，并且比典型显著更高Ë _σ  〜0.1-0.3电子伏特的值报道为Ñ型的CeO ₂。低于10 K时，掺杂Sb的二氧化铈的介电损耗异常和比热过剩都表明低能偶极弛豫，可能与偏心的Sb ³⁺点缺陷的局部动力学有关。