The photovoltaic performance of quantum dot sensitized solar cells (QDSSCs) is limited due to charge recombination processes at the photoelectrode/electrolyte interfaces. We analyzed the effect of Sn⁴⁺ ion incorporation into CdS quantum dots (QDs) deposited onto TiO₂ substrates in terms of enhancing light absorption and retarding electron-hole recombination at the TiO₂/QDs/electrolyte interfaces. Sensitization involved depositing CdS QDs with different Sn⁴⁺ concentrations on the surface of TiO₂ using a facile and cost-effective successive ionic layer adsorption and reaction (SILAR) method. Optimized photovoltaic performance of Sn-CdS sensitized QDSSCs was explored using CuS counter electrodes (CEs) and a polysulfide electrolyte. Structural and optical studies of the photoanodes revealed that the gaps between CdS nanoparticles were partially filled by Sn⁴⁺ ions, which enhanced the light absorption of the solar cell device. Electrochemical impedance spectroscopy (EIS) and open circuit voltage decay (OCVD) tests suggested that Sn⁴⁺ ions can remarkably retard electron-hole recombination at the interfaces, stimulate electron injection into semiconductor QD layers, and provide long-term electron lifetime to the cells. We found that solar cells based on CdS photoanodes doped with 10% Sn⁴⁺ ions exhibited a superior power conversion efficiency (PCE) of 3.22%, open circuit voltage (Voc) of 0.593 V, fill factor (FF) of 0.561, and short-circuit current density (Jsc) of 9.68 mA cm⁻² under an air mass coefficient (AM) 1.5 G full sun illumination. These values were much higher than those of QDSSCs based on bare CdS photoanodes (PCE = 2.16%, Voc = 0.552 V, FF = 0.471, and Jsc = 8.31 mA cm⁻²).

量子点敏化太阳能电池（QDSSC）的光伏性能受到光电极/电解质界面处的电荷复合过程的限制。我们从增强TiO ₂ / QDs /电解质界面处的光吸收和阻止电子-空穴复合的角度分析了Sn ⁴⁺离子掺入沉积在TiO ₂衬底上的CdS量子点（QDs）中的作用。敏化涉及将具有不同Sn ⁴⁺浓度的CdS QD沉积在TiO ₂表面上使用简便且经济高效的连续离子层吸附和反应（SILAR）方法。使用CuS对电极（CE）和多硫化物电解质探索了Sn-CdS敏化QDSSC的最佳光伏性能。对光阳极的结构和光学研究表明，CdS纳米颗粒之间的间隙部分被Sn ⁴⁺离子填充，这增强了太阳能电池器件的光吸收。电化学阻抗谱（EIS）和开路电压衰减（OCVD）测试表明，Sn ⁴⁺离子可以显着延迟界面处的电子-空穴复合，刺激电子注入半导体QD层，并为电池提供长期的电子寿命。我们发现，基于掺有10％Sn ⁴⁺离子的CdS光阳极的太阳能电池表现出3.22％的出色功率转换效率（PCE），0.593 V的开路电压（Voc），0.561的填充系数（FF）和短路在空气质量系数（AM）为1.5 G的全日照下，电路电流密度（Jsc）为9.68 mA cm ^-2。这些值远高于基于裸CdS光阳极的QDSSC的值（PCE = 2.16％，Voc = 0.552 V，FF = 0.471，Jsc = 8.31 mA cm ^-2）。