Interfacial Oxidation and Photoluminescence of InP-Based Core/Shell Quantum Dots,Chemistry of Materials

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Interfacial Oxidation and Photoluminescence of InP-Based Core/Shell Quantum Dots
Chemistry of Materials ( IF 7.2 ) Pub Date : 2018-09-12 00:00:00 , DOI: 10.1021/acs.chemmater.8b03117
Mickael D. Tessier _{1,

2} , Edwin A. Baquero _{3,

4} , Dorian Dupont _{1,

2} , Valeriia Grigel ₁ , Eva Bladt ₅ , Sara Bals ₅ , Yannick Coppel ₆ , Zeger Hens ₁ , Céline Nayral ₃ , Fabien Delpech ₃

Affiliation

Indium phosphide colloidal quantum dots (QDs) are emerging as an efficient cadmium-free alternative for optoelectronic applications. Recently, syntheses based on easy-to-implement aminophosphine precursors have been developed. We show by solid-state nuclear magnetic resonance spectroscopy that this new approach allows oxide-free indium phosphide core or core/shell quantum dots to be made. Importantly, the oxide-free core/shell interface does not help in achieving higher luminescence efficiencies. We demonstrate that in the case of InP/ZnS and InP/ZnSe QDs, a more pronounced oxidation concurs with a higher photoluminescence efficiency. This study suggests that a II–VI shell on a III–V core generates an interface prone to defects. The most efficient InP/ZnS or InP/ZnSe QDs are therefore made with an oxide buffer layer between the core and the shell: it passivates these interface defects but also results in a somewhat broader emission line width.

中文翻译：

基于InP的核/壳量子点的界面氧化和光致发光

磷化铟胶体量子点（QD）逐渐成为光电应用的有效无镉替代品。最近，已经开发了基于易于实现的氨基膦前体的合成方法。我们通过固态核磁共振波谱表明，这种新方法允许制造无氧化物的磷化铟核或核/壳量子点。重要的是，无氧化物的核/壳界面无助于实现更高的发光效率。我们证明在InP / ZnS和InP / ZnSe量子点的情况下，更明显的氧化与更高的光致发光效率并存。这项研究表明，III-V核上的II-VI壳会产生易于产生缺陷的界面。因此，最有效的InP / ZnS或InP / ZnSe QD是在芯和壳之间使用氧化物缓冲层制成的：

更新日期：2018-09-12

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