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A Cryogenic Process for Antisolvent‐Free High‐Performance Perovskite Solar Cells
Advanced Materials ( IF 27.4 ) Pub Date : 2018-09-12 , DOI: 10.1002/adma.201804402 Annie Ng 1 , Zhiwei Ren 2 , Hanlin Hu 2 , Patrick W. K. Fong 2 , Qian Shen 2 , Sin Hang Cheung 3 , Pingli Qin 2 , Jin-Wook Lee 4 , Aleksandra B. Djurišić 5 , Shu Kong So 3 , Gang Li 2 , Yang Yang 4 , Charles Surya 6
Advanced Materials ( IF 27.4 ) Pub Date : 2018-09-12 , DOI: 10.1002/adma.201804402 Annie Ng 1 , Zhiwei Ren 2 , Hanlin Hu 2 , Patrick W. K. Fong 2 , Qian Shen 2 , Sin Hang Cheung 3 , Pingli Qin 2 , Jin-Wook Lee 4 , Aleksandra B. Djurišić 5 , Shu Kong So 3 , Gang Li 2 , Yang Yang 4 , Charles Surya 6
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A cryogenic process is introduced to control the crystallization of perovskite layers, eliminating the need for the use of environmentally harmful antisolvents. This process enables decoupling of the nucleation and the crystallization phases by inhibiting chemical reactions in as‐cast precursor films rapidly cooled down by immersion in liquid nitrogen. The cooling is followed by blow‐drying with nitrogen gas, which induces uniform precipitation of precursors due to the supersaturation of precursors in the residual solvents at very low temperature, while at the same time enhancing the evaporation of the residual solvents and preventing the ordered precursors/perovskite from redissolving into the residual solvents. Using the proposed techniques, the crystallization process can be initiated after the formation of a uniform precursor seed layer. The process is generally applicable to improve the performance of solar cells using perovskite films with different compositions, as demonstrated on three different types of mixed halide perovskites. A champion power conversion efficiency (PCE) of 21.4% with open‐circuit voltage (VOC) = 1.14 V, short‐circuit current density ( JSC) = 23.5 mA cm−2, and fill factor (FF) = 0.80 is achieved using the proposed cryogenic process.
中文翻译：
无溶剂高性能钙钛矿太阳能电池的低温工艺
引入了一种低温工艺来控制钙钛矿层的结晶，从而无需使用对环境有害的抗溶剂。通过抑制因浸入液氮中而迅速冷却的铸态前体膜中的化学反应，该过程可实现成核相和结晶相的解耦。冷却后再用氮气吹干，由于在非常低的温度下残留溶剂中的前驱物过饱和，会诱导前驱物均匀沉淀，同时增强了残留溶剂的蒸发并防止了有序的前驱物/钙钛矿重新溶解到残留溶剂中。使用提出的技术，可以在形成均匀的前体种子层之后开始结晶过程。如在三种不同类型的混合卤化物钙钛矿上所证明的，该方法通常适用于使用具有不同组成的钙钛矿膜来改善太阳能电池的性能。开路电压（2）的最高功率转换效率（PCE）为21.4％（V OC）= 1.14 V，短路电流密度（J SC）= 23.5 mA cm -2，填充系数（FF）= 0.80可以通过拟议的低温工艺实现。
更新日期：2018-09-12
中文翻译：
无溶剂高性能钙钛矿太阳能电池的低温工艺
引入了一种低温工艺来控制钙钛矿层的结晶，从而无需使用对环境有害的抗溶剂。通过抑制因浸入液氮中而迅速冷却的铸态前体膜中的化学反应，该过程可实现成核相和结晶相的解耦。冷却后再用氮气吹干，由于在非常低的温度下残留溶剂中的前驱物过饱和，会诱导前驱物均匀沉淀，同时增强了残留溶剂的蒸发并防止了有序的前驱物/钙钛矿重新溶解到残留溶剂中。使用提出的技术，可以在形成均匀的前体种子层之后开始结晶过程。如在三种不同类型的混合卤化物钙钛矿上所证明的，该方法通常适用于使用具有不同组成的钙钛矿膜来改善太阳能电池的性能。开路电压（2）的最高功率转换效率（PCE）为21.4％（V OC）= 1.14 V，短路电流密度（J SC）= 23.5 mA cm -2，填充系数（FF）= 0.80可以通过拟议的低温工艺实现。
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