We present a highly versatile system ReS₂, which transforms from a semiconductor to a two dimensional metal under uni-axial compressive strain along ‘a’ direction in both bulk and monolayer. The 2D nature is realised from highly flat Fermi surfaces and anisotropic transport properties. Moreover the layer independent electronic structure properties are revisited and thermoelectric properties of ReS₂ in bulk, monolayer and bilayer forms reveal the competing thermoelectric (TE) coefficients in each form. The in-plane power-factor shows an enhancement over ‘c’-axis value as a function of strain, which is almost two orders of magnitude. In addition, strain induced tunable in-plane anisotropy of almost one order has been observed in both bulk and monolayer ReS₂ (around 20%), which further open up the possibility of TE application as nanowires. Our analysis unveils a wide range of application for ReS₂ in the field of thermoelectrics as bulk and thin films for a large temperature range. The magnitude of TE coefficients are comparable with other well established transition metal dichalocogenides.

我们提出了一种高度通用的系统ReS ₂，它在单层压缩和单层压缩中都沿“ a”方向在单轴压缩应变下从半导体转变为二维金属。二维特性是通过高度平坦的费米表面和各向异性的传输特性实现的。此外，重新考虑了与层无关的电子结构性质，并且本体，单层和双层形式的ReS _2的热电性质揭示了每种形式中竞争的热电（TE）系数。面内功率因数显示出“ c ”轴值随应变的增加，几乎是两个数量级。此外，在体层和单层ReS中均观察到应变引起的几乎一阶的可调谐面内各向异性₂（约20％），这进一步开辟了TE应用作为纳米线的可能性。我们的分析揭示了ReS ₂在热电学领域中的广泛应用，如大温度范围内的块状和薄膜状。TE系数的大小可与其他成熟的过渡金属双硫属元素化物媲美。