Josephson Effect in a Few‐Hole Quantum Dot,Advanced Materials

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Josephson Effect in a Few‐Hole Quantum Dot
Advanced Materials ( IF 27.4 ) Pub Date : 2018-09-10 , DOI: 10.1002/adma.201802257
Joost Ridderbos ₁ , Matthias Brauns ₁ , Jie Shen ₂ , Folkert K. de Vries ₂ , Ang Li ₃ , Erik P. A. M. Bakkers _{2,

3} , Alexander Brinkman ₁ , Floris A. Zwanenburg ₁

Affiliation

A Ge–Si core–shell nanowire is used to realize a Josephson field‐effect transistor with highly transparent contacts to superconducting leads. By changing the electric field, access to two distinct regimes, not combined before in a single device, is gained: in the accumulation mode the device is highly transparent and the supercurrent is carried by multiple subbands, while near depletion, the supercurrent is carried by single‐particle levels of a strongly coupled quantum dot operating in the few‐hole regime. These results establish Ge–Si nanowires as an important platform for hybrid superconductor–semiconductor physics and Majorana fermions.

中文翻译：

微孔量子点中的约瑟夫森效应

Ge-Si核壳纳米线用于实现具有超导引线高度透明触点的Josephson场效应晶体管。通过改变电场，可以获得进入两个不同状态的机会，这是以前在单个设备中未结合的：在累积模式下，设备高度透明，超电流由多个子带承载，而接近耗尽时，超电流由以下子载波承载：在少数空穴状态下工作的强耦合量子点的单粒子能级。这些结果将Ge-Si纳米线确立为混合超导体-半导体物理和Majorana费米子的重要平台。

更新日期：2018-09-10

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