Thermally Induced 2D Alloy‐Heterostructure Transformation in Quaternary Alloys,Advanced Materials

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Thermally Induced 2D Alloy‐Heterostructure Transformation in Quaternary Alloys
Advanced Materials ( IF 27.4 ) Pub Date : 2018-09-10 , DOI: 10.1002/adma.201804218
Sandhya Susarla ₁ , Jordan A. Hachtel ₂ , Xiting Yang ₁ , Alex Kutana ₁ , Amey Apte ₁ , Zehua Jin ₁ , Robert Vajtai ₁ , Juan Carlos Idrobo ₂ , Jun Lou ₁ , Boris I. Yakobson ₁ , Chandra Sekhar Tiwary _{1,

3} , Pulickel M. Ajayan ₁

Affiliation

Composition and phase specific 2D transition metal dichalogenides (2D TMDs) with a controlled electronic and chemical structure are essential for future electronics. While alloying allows bandgap tunability, heterostructure formation creates atomically sharp electronic junctions. Herein, the formation of lateral heterostructures from quaternary 2D TMD alloys, by thermal annealing, is demonstrated. Phase separation is observed through photoluminescence and Raman spectroscopy, and the sharp interface of the lateral heterostructure is examined via scanning transmission electron microscopy. The composition‐dependent transformation is caused by existence of miscibility gap in the quaternary alloys. The phase diagram displaying the miscibility gap is obtained from the reciprocal solution model based on density functional theory and verified experimentally. The experiments show direct evidence of composition‐driven heterostructure formation in 2D atomic layer systems.

中文翻译：

四元合金中的热诱导二维合金-异质结构转变

具有受控电子和化学结构的成分和特定于相的2D过渡金属二卤化物（2D TMD）对于未来的电子产品至关重要。虽然合金化使带隙可调，但异质结构的形成会产生原子上尖锐的电子结。在此，说明了通过热退火由四元2D TMD合金形成侧向异质结构。通过光致发光和拉曼光谱观察到相分离，并且通过扫描透射电子显微镜检查横向异质结构的尖锐界面。依赖于组成的转变是由于四元合金中存在混溶间隙引起的。根据密度泛函理论从互解模型中获得显示可溶间隙的相图，并进行了实验验证。实验显示了2D原子层系统中由成分驱动的异质结构形成的直接证据。

更新日期：2018-09-10

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