This paper is designed for elevating the photocatalytic H₂-evoultion performance of g-C₃N₄ through the modification of AgNbO₃ nanocubes. Via the microwave heating method, g-C₃N₄ was in-situ formed on AgNbO₃ surface to fabricate a close contact between the two semiconductors in forty minutes. X-ray diffraction (XRD), Fourier transform-infrared (FT-IR), X-ray photoelectron spectroscopy (XPS) experiments were performed to confirm the binary structure of the synthesized AgNbO₃/g-C₃N₄ composite. N₂-adsorption and visible diffuse reflection spectroscopy (DRS) analyses indicated that the addition of AgNbO₃ to g-C₃N₄ showed nearly negligible influence on the specific surface area and the optical property. Photoluminescence (PL) spectroscopy experiment suggested that the AgNbO₃/g-C₃N₄ displayed reduced PL emission and longer lifetime of photoexcited charge carriers than g-C₃N₄, which could be ascribed to the suitable band potential and the intimate contact of g-C₃N₄ and AgNbO₃. This result was also confirmed by the transient photocurrent response experiment. The influence of the enhanced charge separation was displayed in their photocatalytic reaction. AgNbO₃/g-C₃N₄ sample showed enhanced performance in photocatalytic H₂-generation under visible light illumination. The H₂-evolution rate is determined to be 88 μmol·g⁻¹·h⁻¹, which reaches 2.0 times of g-C₃N₄. This study provides a feasible and rapid approach to fabricate g-C₃N₄ based composite.

本文旨在通过修饰AgNbO ₃纳米立方体来提高gC ₃ N ₄的光催化H ₂驱除性能。通过微波加热方法，在AgNbO ₃表面上原位形成gC ₃ N ₄，以在四十分钟内制造出两个半导体之间的紧密接触。进行了X射线衍射（XRD），傅里叶变换红外（FT-IR），X射线光电子能谱（XPS）实验，以确认合成的AgNbO ₃ / gC ₃ N ₄复合材料的二元结构。N ₂吸附和可见漫反射光谱法（DRS）分析表明，向gC ₃ N _4中添加AgNbO ₃对比表面积和光学性质的影响几乎可以忽略不计。光致发光（PL）光谱实验建议AgNbO ₃ / GC ₃ Ñ ₄显示的缩小PL发射和光激发电荷载体的比GC更长的寿命₃ Ñ ₄，这可以归因于的合适的带潜力和GC的紧密接触₃ Ñ ₄和AgNbO ₃。瞬态光电流响应实验也证实了这一结果。在它们的光催化反应中显示出增强的电荷分离的影响。AgNbO ₃ / gC ₃ N ₄样品在可见光照射下表现出增强的光催化H ₂生成性能。H _2的演化速率被确定为88μmol·g ^-1 ·h ^-1，达到gC ₃ N _4的2.0倍。这项研究提供了一种可行且快速的方法来制造基于gC ₃ N ₄的复合材料。