The power conversion efficiency of quantum dot sensitized solar cells with ZnO as photoelctrode is relatively low, largely due to high charge recombination rate at the ZnO surface. This paper reports high-efficiency hierarchical ZnO microspheres photoelectrodes with appropriate Zn chalcogenide passivation layers ([email protected] and [email protected]) were constructed for reducing charge recombination of the resultant QDSCs. They were fabricated via a facile chemical solution route without any template or high temperature condition followed with controlled ion exchange. ZnS or ZnSe serves as passivation layer in CdS/CdSe QDSCs and their influences on the charge recombination as well as the light absorption were investigated. It was found that the ZnS or ZnSe passivation layer can effectively reduce charge recombination and significantly enhance the fill factor and open circuit voltage of the resulting QDSCs. Both of ZnS and ZnSe passivation layers enhanced the overall performance of the resultant QDSCs, which generated high power conversion efficiency of 5.13% and 5.20%, present 52% and 55% enhancement compared with 3.36% for the solar cell with hierarchical ZnO microspheres photoelectrode. ZnSe appears more favoring the deposition of QDs and enhancing the light absorbance than ZnS, resulting in an increased photocurrent density.

以ZnO为光电极的量子点敏化太阳能电池的功率转换效率相对较低，这在很大程度上是由于ZnO表面的高电荷复合率。本文报道了具有适当的Zn硫属元素钝化层（[电子邮件保护]和[电子邮件保护]）的高效分层ZnO微球光电极，用于减少所得QDSC的电荷复合。它们是通过简便的化学溶液路线制造的，没有任何模板或高温条件，随后进行了受控的离子交换。ZnS或ZnSe作为CdS / CdSe QDSC中的钝化层，研究了它们对电荷复合以及光吸收的影响。发现ZnS或ZnSe钝化层可以有效地减少电荷复合并显着提高所得QDSC的填充因子和开路电压。ZnS和ZnSe钝化层均增强了所得QDSC的整体性能，产生了5.13％和5.20％的高功率转换效率，与具有分层ZnO微球光电极的太阳能电池的3.36％相比，呈现了52％和55％的增强。ZnSe似乎比ZnS更有利于QD的沉积并增强光吸收率，从而导致光电流密度增加。与具有分层ZnO微球光电极的太阳能电池的3.36％相比，目前的增幅为52％和55％。ZnSe似乎比ZnS更有利于QD的沉积并增强光吸收率，从而导致光电流密度增加。与具有分层ZnO微球光电极的太阳能电池的3.36％相比，目前的增幅为52％和55％。ZnSe似乎比ZnS更有利于QD的沉积并增强光吸收率，从而导致光电流密度增加。