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Deep Level and Near‐Band‐Edge Recombination in Semiconducting Antiperovskite Hg3Se2I2 Single Crystals
Advanced Optical Materials ( IF 8.0 ) Pub Date : 2018-09-05 , DOI: 10.1002/adom.201800328 Sanjib Das 1 , Kyle M. McCall 1, 2 , John A. Peters 1, 3 , Yihui He 2 , Joon-Il Kim 1 , Zhifu Liu 1 , Mercouri G. Kanatzidis 1, 2 , Bruce W. Wessels 1
Advanced Optical Materials ( IF 8.0 ) Pub Date : 2018-09-05 , DOI: 10.1002/adom.201800328 Sanjib Das 1 , Kyle M. McCall 1, 2 , John A. Peters 1, 3 , Yihui He 2 , Joon-Il Kim 1 , Zhifu Liu 1 , Mercouri G. Kanatzidis 1, 2 , Bruce W. Wessels 1
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The wide‐bandgap, semiconducting ternary compound Hg3Se2I2 has shown promise as room‐temperature hard‐radiation detector. Since this compound was first reported, there has been significant improvement in crystal growth using a chemical vapor transport method with a polyethylene growth agent. To study the effects of this additional precursor on crystal quality, the nature of radiative and nonradiative defects using photoluminescence (PL) and photocurrent (PC) studies of Hg3Se2I2 single crystals are investigated. In contrast to earlier studies, excitation intensity‐dependence of PL emission shows that the near‐band‐edge (NBE) emission bands are all excitonic in nature. The PL intensity decreases with increasing temperature, with the higher energy peaks quenching by 40 K and the deeper levels quenched after 110 K. The PC spectra show a complex structure at room temperature related to NBE transitions in the band structure, while at low temperature only the direct gap transition is observed due to phonons freezing out. The PC spectra at low temperature also indicate several midgap levels that are attributed to native defects within the bulk crystal. These results indicate that the high quality of Hg3Se2I2 single crystals is maintained when the transport agent is used during growth, although there are still a variety of defects present.
中文翻译：
半导体抗钙钛矿Hg3Se2I2单晶的深层和近带边缘复合。
宽带隙的半导体三元化合物Hg 3 Se 2 I 2已显示出有望用作室温硬辐射探测器。自从首次报道该化合物以来，使用化学气相传输法和聚乙烯生长剂在晶体生长方面有了显着改善。为了研究此附加前驱物对晶体质量，Hg 3 Se 2 I 2的光致发光（PL）和光电流（PC）研究的辐射和非辐射缺陷的性质，研究了单晶。与早期研究相反，PL发射的激发强度依赖性表明，近带边缘（NBE）发射带在本质上都是激子。PL强度随温度升高而降低，较高的能量峰被40 K淬灭，而较深的能级在110 K之后被淬灭。PC光谱显示室温下与能带结构中NBE跃迁有关的复杂结构，而仅在低温下由于声子冻结，可以观察到直接的间隙跃迁。低温下的PC光谱也表明了几个中间能级，这归因于块状晶体中的天然缺陷。这些结果表明，高质量的Hg 3 Se 2 I 2 在生长过程中使用转运剂时，仍可保持单晶，尽管仍然存在多种缺陷。
更新日期：2018-09-05
中文翻译：
半导体抗钙钛矿Hg3Se2I2单晶的深层和近带边缘复合。
宽带隙的半导体三元化合物Hg 3 Se 2 I 2已显示出有望用作室温硬辐射探测器。自从首次报道该化合物以来，使用化学气相传输法和聚乙烯生长剂在晶体生长方面有了显着改善。为了研究此附加前驱物对晶体质量，Hg 3 Se 2 I 2的光致发光（PL）和光电流（PC）研究的辐射和非辐射缺陷的性质，研究了单晶。与早期研究相反，PL发射的激发强度依赖性表明，近带边缘（NBE）发射带在本质上都是激子。PL强度随温度升高而降低，较高的能量峰被40 K淬灭，而较深的能级在110 K之后被淬灭。PC光谱显示室温下与能带结构中NBE跃迁有关的复杂结构，而仅在低温下由于声子冻结，可以观察到直接的间隙跃迁。低温下的PC光谱也表明了几个中间能级，这归因于块状晶体中的天然缺陷。这些结果表明，高质量的Hg 3 Se 2 I 2 在生长过程中使用转运剂时，仍可保持单晶，尽管仍然存在多种缺陷。
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