High-performance organic field-effect transistors based on organic single crystal microribbons fabricated by an in situ annealing method†,Materials Chemistry Frontiers

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High-performance organic field-effect transistors based on organic single crystal microribbons fabricated by an in situ annealing method†
Materials Chemistry Frontiers ( IF 6.0 ) Pub Date : 2018-09-04 00:00:00 , DOI: 10.1039/c8qm00385h
Ji Zhang _{1,

2,

3,

4,

5} , Zhaoguang Li _{6,

7,

8,

9,

10} , Weifeng Zhang _{1,

2,

3,

4,

5} , Man Shing Wong _{6,

7,

8,

9,

10} , Gui Yu _{1,

2,

3,

4,

5}

Affiliation

In situ fabrication of microribbon transistors has been considered an efficient and facile approach compared with normal solution method or physical vapor transport techniques, and could also prevent the introduction of impurities. Herein, the naphtho[2,1-b:3,4-b′]bisthieno[3,2-b][1]benzothiophene derivative (NBTBT-6) with two alkoxy-side chains was used to fabricate single crystal microribbon-based transistors by in situ annealing of the NBTBT-6 thin films. Carrier mobilities of transistors based on the NBTBT-6 microribbons were one order of magnitude higher than those of thin film devices. Related characterizations of the NBTBT-6 microribbon showed its single crystalline structure with good directionality. Furthermore, the process of crystal formation is discussed.

中文翻译：

基于有机单晶微带的原位退火法制造的高性能有机场效应晶体管†

与常规溶液法或物理气相传输技术相比，微带状晶体管的原位制造已被认为是一种有效且简便的方法，并且还可以防止杂质的引入。本文中，使用具有两个烷氧基侧链的萘并[ 2,1 - b：3,4- b ']双噻吩并[3,2- b ] [1]苯并噻吩衍生物（NBTBT-6）制备单晶微带-通过对NBTBT-6薄膜进行原位退火来制造基极晶体管。基于NBTBT-6微带的晶体管的载流子迁移率比薄膜器件高。NBTBT-6的相关特性微带显示出其单晶结构，具有良好的方向性。此外，讨论了晶体形成的过程。

更新日期：2018-09-04

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