Down converter SiN_x:Yb³⁺/SiN_x:Tb³⁺ multilayers are deposited by reactive magnetron cosputtering with the objective of optimizing the interaction distance between Tb³⁺ and Yb³⁺ ions to favor a better light management in Si solar cells. Those Si‐based multilayers are developed to be compatible with the Si photovoltaic technology. The deposition parameters are optimized to enhance the emission of the Yb³⁺ ions in the IR region. The emission efficiency of such multilayer structure is compared with a mixed RE SiN_x:Tb³⁺‐Yb³⁺ layer evidencing a gain resulting from a better management of the Tb³⁺ and Yb³⁺ ions distance. At the end, we integrate the growth of such a multilayer in an industrial Si solar cell process and demonstrate the existence of a frequency conversion effect that is promising for the future increase of the Si solar cell efficiency.

中文翻译：

---

工业硅太阳能电池工艺中的首个下变频器多层集成

通过反应磁控共溅射沉积下变换器SiN _x：Yb ³⁺ / SiN _x：Tb ³⁺多层，目的是优化Tb ³⁺和Yb ³⁺离子之间的相互作用距离，从而有利于硅太阳能电池更好的光管理。那些基于Si的多层被开发为与Si光伏技术兼容。优化沉积参数以增强IR区域中Yb ³⁺离子的发射。将这种多层结构的发射效率与混合的RE SiN _x：Tb ³⁺ -Yb ^{3+进行比较}Tb ³⁺层显示出更好地管理Tb ³⁺和Yb ³⁺离子距离而获得的增益。最后，我们将这种多层材料的生长过程集成到了工业化的硅太阳能电池工艺中，并证明了频率转换效应的存在，该效应有望在未来提高硅太阳能电池的效率。