当前位置：
X-MOL 学术
›
Adv. Opt. Mater.
›
论文详情
Our official English website, www.x-mol.net, welcomes your
feedback! (Note: you will need to create a separate account there.)
Highly Efficient and Stable Self‐Powered Ultraviolet and Deep‐Blue Photodetector Based on Cs2AgBiBr6/SnO2 Heterojunction
Advanced Optical Materials ( IF 8.0 ) Pub Date : 2018-09-03 , DOI: 10.1002/adom.201800811 Cuncun Wu 1 , Bowen Du 1 , Wei Luo 1 , Yang Liu 1 , Tieyi Li 1 , Duo Wang 1 , Xuan Guo 1 , Hungkit Ting 1 , Zheyu Fang 1 , Shufeng Wang 1 , Zhijian Chen 1 , Yanxue Chen 2 , Lixin Xiao 1, 3
Advanced Optical Materials ( IF 8.0 ) Pub Date : 2018-09-03 , DOI: 10.1002/adom.201800811 Cuncun Wu 1 , Bowen Du 1 , Wei Luo 1 , Yang Liu 1 , Tieyi Li 1 , Duo Wang 1 , Xuan Guo 1 , Hungkit Ting 1 , Zheyu Fang 1 , Shufeng Wang 1 , Zhijian Chen 1 , Yanxue Chen 2 , Lixin Xiao 1, 3
Affiliation
|
Ultraviolet (UV) photodetectors with high responsivity and fast response are crucial for practical applications. Double perovskite Cs2AgBiBr6 has emerged as a promising optoelectronic material due to its excellent physics and photoelectric properties. However, no work is reported based on its film for photodetector applications. Herein, an ITO/SnO2/Cs2AgBiBr6/Au hole‐transport layer free planar heterojunction device is fabricated for photodetector application. The device is self‐powered with two responsivity peaks at 350 and 435 nm, which is suitable for ultraviolet‐A (320–400 nm) and deep‐blue light detecting. A high responsivity of 0.11 A W−1 at 350 nm and a quick response time of less than 3 ms are obtained, which is significantly higher than other semiconductor oxide heterojunction‐based UV detectors. More importantly, the stability is significantly better than most of the hybrid perovskite photodetectors reported so far. Its photocurrent shows no obvious degradation after more than 6 months storage in ambient conditions without any encapsulation. Consequently, the utilization of Cs2AgBiBr6 film is a practical approach for high performance, large‐area lead‐free perovskite photodetector applications. For the mechanism, it is found that photogenerated carriers in Cs2AgBiBr6 film are separated at the Cs2AgBiBr6/SnO2 heterojunction interface by its built‐in field. The low toxicity and high stability of this double perovskite active layer make it very promising for practical applications.
中文翻译：
基于Cs2AgBiBr6 / SnO2异质结的高效稳定的自供电紫外和深蓝色光电探测器
具有高响应性和快速响应能力的紫外线（UV）光电探测器对于实际应用至关重要。双钙钛矿Cs 2 AgBiBr 6由于其优异的物理性能和光电性能而成为有前途的光电材料。然而，没有报道基于其用于光电检测器的胶卷的工作。在此，制造了用于光电探测器应用的无ITO / SnO 2 / Cs 2 AgBiBr 6 / Au空穴传输层的平面异质结器件。该设备是自供电的，在350和435 nm处有两个响应峰，适用于紫外A（320-400 nm）和深蓝光检测。0.11 AW -1的高响应度在350 nm处获得的快速响应时间不到3 ms，这明显高于其他基于半导体氧化物异质结的UV检测器。更重要的是，其稳定性明显优于迄今为止报道的大多数混合钙钛矿光电探测器。在没有任何封装的环境条件下保存超过6个月后，其光电流没有显示出明显的降解。因此，对于高性能，大面积无铅钙钛矿光电探测器应用，使用Cs 2 AgBiBr 6膜是一种实用的方法。对于该机理，发现Cs 2 AgBiBr 6膜中的光生载流子在Cs 2 AgBiBr 6 / SnO处分离。2个异质结接口（通过其内置字段）。这种双重钙钛矿活性层的低毒性和高稳定性使其在实际应用中非常有前途。
更新日期：2018-09-03
中文翻译：
基于Cs2AgBiBr6 / SnO2异质结的高效稳定的自供电紫外和深蓝色光电探测器
具有高响应性和快速响应能力的紫外线（UV）光电探测器对于实际应用至关重要。双钙钛矿Cs 2 AgBiBr 6由于其优异的物理性能和光电性能而成为有前途的光电材料。然而，没有报道基于其用于光电检测器的胶卷的工作。在此，制造了用于光电探测器应用的无ITO / SnO 2 / Cs 2 AgBiBr 6 / Au空穴传输层的平面异质结器件。该设备是自供电的，在350和435 nm处有两个响应峰，适用于紫外A（320-400 nm）和深蓝光检测。0.11 AW -1的高响应度在350 nm处获得的快速响应时间不到3 ms，这明显高于其他基于半导体氧化物异质结的UV检测器。更重要的是，其稳定性明显优于迄今为止报道的大多数混合钙钛矿光电探测器。在没有任何封装的环境条件下保存超过6个月后，其光电流没有显示出明显的降解。因此，对于高性能，大面积无铅钙钛矿光电探测器应用，使用Cs 2 AgBiBr 6膜是一种实用的方法。对于该机理，发现Cs 2 AgBiBr 6膜中的光生载流子在Cs 2 AgBiBr 6 / SnO处分离。2个异质结接口（通过其内置字段）。这种双重钙钛矿活性层的低毒性和高稳定性使其在实际应用中非常有前途。
京公网安备 11010802027423号