Integrating Ultrathin Bulk‐Heterojunction Organic Semiconductor Intermediary for High‐Performance Low‐Bandgap Perovskite Solar Cells with Low Energy Loss,Advanced Functional Materials

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Integrating Ultrathin Bulk‐Heterojunction Organic Semiconductor Intermediary for High‐Performance Low‐Bandgap Perovskite Solar Cells with Low Energy Loss
Advanced Functional Materials ( IF 18.5 ) Pub Date : 2018-08-31 , DOI: 10.1002/adfm.201804427
Guiying Xu ₁ , Pengqing Bi ₂ , Shuhui Wang ₁ , Rongming Xue ₁ , Jingwen Zhang ₁ , Haiyang Chen ₁ , Weijie Chen ₁ , Xiaotao Hao ₂ , Yaowen Li ₁ , Yongfang Li _{1,

3}

Affiliation

Mixed tin (Sn)–lead (Pb) perovskite is considered the most promising low‐bandgap photovoltaic material for both pursuing the theoretical limiting efficiency of single‐junction solar cells and breaking the Shockley–Queisser limitation by constructing tandem solar cells. However, their power conversion efficiencies (PCEs) are still lagging behind those of medium‐bandgap perovskite solar cells (pero‐SCs) due to their serious energy loss (E_loss). Here, an ultrathin bulk‐heterojunction (BHJ) organic semiconductor (PBDB‐T:ITIC) layer is used as an intermediary between the hole transporting layer and Sn–Pb‐based low‐bandgap perovskite film to minimize E_loss. It is found that this BHJ PBDB‐T:ITIC intermediary simultaneously provided a cascading energy alignment in the device, facilitated high‐quality Sn–Pb perovskite film growth, and passivated the antisite defects of the perovskite surface. In this simple way, the E_loss of pero‐SCs based on (FASnI₃)_0.6(MAPbI₃)_0.4 (bandgap ≈1.25 eV) is dramatically reduced below 0.4 eV, leading to a high open‐circuit voltage (V_oc) of 0.86 V. As a result, the best pero‐SC showed a significantly improved PCE of 18.03% with negligible J–V hysteresis and high stability. As far as it is known, the PCE of 18.03% and V_oc of 0.86 V are the highest values among the low‐bandgap pero‐SCs to date.

中文翻译：

集成超薄的体-异质结有机半导体中间体，以实现具有低能量损耗的高性能低带隙钙钛矿太阳能电池

混合锡（Sn）-铅（Pb）钙钛矿被认为是最有前途的低带隙光伏材料，既可以追求单结太阳能电池的理论极限效率，又可以通过构造串联太阳能电池来突破肖克利-奎塞尔极限。但是，由于其严重的能量损失（E_损失），它们的功率转换效率（PCE）仍落后于中带隙钙钛矿型太阳能电池（pero-SC ）。在这里，使用超薄体异质结（BHJ）有机半导体（PBDB-T：ITIC）层作为空穴传输层和Sn-Pb基低带隙钙钛矿膜之间的中间层，以最大程度地减少E_损失。已发现，这种BHJ PBDB-T：ITIC中间体同时在器件中提供了级联能量对准，促进了高质量的Sn-Pb钙钛矿膜的生长，并钝化了钙钛矿表面的反位缺陷。通过这种简单方法，基于（FASnI ₃）_0.6（MAPbI ₃）_0.4（带隙≈1.25eV）的pero-SC的E_损耗大大降低到0.4 eV以下，从而导致高开路电压（V _oc）为结果是0.86V。因此，最佳的pero-SC显示出PCE显着提高了18.03％，J-V滞后可以忽略不计，并且具有很高的稳定性。据了解，PCE为18.03％，V _oc 迄今为止，低带隙pero-SC中的最高值为0.86V。

更新日期：2018-08-31

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