Single CdS nanobelt-based photodetectors are strongly dependent on bias and temperature. They not only show a strong photoresponse to close bandgap energy light with ultrahigh responsivity of approximately 10⁷ A W⁻¹, large photo-to-dark current ratio of 10⁴, photoconductive gain of 10⁷, and fast response and recovery speed at a large bias of 20 V, but can also show a weak photoresponse to above- and below-bandgap energy light. Moreover, their spectral response range can show tunable selectivity to above- and below-bandgap light, which can be accurately controlled by temperature and bias. More importantly, the modulated spectral response characteristics show excellent memory behaviour after reversible writing and erasing by using temperature and bias. In nanostructures, abundant surface states and stacking fault-related traps play a vital role in the ultrahigh photoresponse to bandgap light and the erasable memory effect on spectral response range selectivity. Given the erasable memory of the spectral response selectivity with excellent photoconduction performance, the CdS NBs possess important applications in new-generation photodetection and photomemory devices.

中文翻译：

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在单个基于CdS纳米带的光电探测器中，由温度和偏置调制的光谱选择性的可擦写存储特性

单个基于CdS纳米带的光电探测器强烈依赖于偏压和温度。它们不仅显示出对闭合带隙能量光的强光响应，具有约10 ⁷ AW ^-1的超高响应度，10 ^4的大光暗电流比，10 ^7的光导增益，并且在20 V的大偏置下具有较快的响应和恢复速度，但对带隙以上和以下的能量光也可能显示出较弱的光响应。此外，它们的光谱响应范围可以显示出对带隙上方和下方的带隙光的可调选择性，该选择性可以通过温度和偏置精确控制。更重要的是，在通过使用温度和偏压进行可逆的写入和擦除操作之后，调制后的光谱响应特性显示出出色的存储性能。在纳米结构中，丰富的表面态和与断层有关的陷阱在对带隙光的超高光响应以及对光谱响应范围选择性的可擦除存储效应中起着至关重要的作用。鉴于光谱响应选择性的可擦写存储器具有出色的光电导性能，