Near-Infrared Electroluminescence and Low Threshold Amplified Spontaneous Emission above 800 nm from a Thermally Activated Delayed Fluorescent Emitter,Chemistry of Materials

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Near-Infrared Electroluminescence and Low Threshold Amplified Spontaneous Emission above 800 nm from a Thermally Activated Delayed Fluorescent Emitter
Chemistry of Materials ( IF 7.2 ) Pub Date : 2018-08-29 00:00:00 , DOI: 10.1021/acs.chemmater.8b02247
Hao Ye , Dae Hyeon Kim ₁ , Xiankai Chen ₂ , Atula S. D. Sandanayaka , Jong Uk Kim , Elena Zaborova ₃ , Gabriel Canard ₃ , Youichi Tsuchiya , Eun Young Choi ₄ , Jeong Weon Wu _{4,

5} , Frédéric Fages ₃ , Jean-Luc Bredas ₂ , Anthony D’Aléo _{1,

3,

5} , Jean-Charles Ribierre ₆ , Chihaya Adachi ₇

Affiliation

Near-infrared (NIR) organic light-emitting devices have aroused increasing interest because of their potential applications such as information-secured displays, photodynamic therapy, and optical telecommunication. While thermally activated delayed fluorescent (TADF) emitters have been used in a variety of high-performance organic light-emitting diodes (OLEDs) emitting in the visible spectral range, efficient NIR TADF materials have been rarely reported. Herein, we designed and synthesized a novel solution-processable NIR TADF dimeric borondifluoride curcuminoid derivative with remarkable photophysical, electroluminescence and amplified spontaneous emission properties. This dye was specifically developed to shift the emission of borondifluoride curcuminoid moiety toward longer wavelengths in the NIR region while keeping a high photoluminescence quantum yield. The most efficient OLED fabricated in this study exhibits a maximum external quantum efficiency of 5.1% for a maximum emission wavelength of 758 nm, which ranks among the highest performance for NIR electroluminescence. In addition, this NIR TADF emitter in doped thin films displays amplified spontaneous emission above 800 nm with a threshold as low as 7.5 μJ/cm², providing evidence that this material is suitable for the realization of high-performance NIR organic semiconductor lasers.

中文翻译：

热激活延迟荧光发射体在800 nm以上的近红外电致发光和低阈值放大自发发射。

由于近红外（NIR）有机发光设备的潜在应用，例如信息安全显示器，光动力疗法和光通信，因此引起了越来越多的关注。尽管热激活延迟荧光（TADF）发射器已用于可见光谱范围内发射的各种高性能有机发光二极管（OLED），但几乎没有报道过有效的NIR TADF材料。在这里，我们设计和合成了一种新型的可溶液加工的近红外TADF二聚二氟化硼姜黄素衍生物，具有显着的光物理，电致发光和自发发射特性。该染料经过专门开发，可将二氟化硼姜黄素部分的发射移向NIR区域中的更长波长，同时保持高的光致发光量子产率。在这项研究中制造的最高效的OLED在758 nm的最大发射波长下表现出5.1％的最大外部量子效率，在NIR电致发光性能中名列前茅。此外，这种掺杂薄膜中的NIR TADF发射器在800 nm以上具有放大的自发发射，其阈值低至7.5μJ/ cm^参见图2，提供了该材料适用于实现高性能NIR有机半导体激光器的证据。

更新日期：2018-08-29

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