We describe the controlled reduction of copper(I) oxide films to metallic copper in a non-thermal, atmospheric pressure, helium plasma jet. Thin layers (≈0.1 μm) of Cu₂O are electrochemically deposited onto Pt electrodes and placed in capacitively coupled helium plasma doped with H₂, O₂ or CH₄ gases. Ex situ Raman spectroscopy was used to probe the effect of plasma treatment on the deposited copper oxide layer. We show that application of a static bias voltage to the Pt substrate during plasma exposure can control the rate of reduction of the copper(I) oxide film. We propose that the reduction process is mediated by plasma electrons and controlling the electron flux to the surface can be used as a means to modulate the reduction process.

我们描述了在非热，大气压，氦等离子体射流中将氧化铜（I）膜受控还原为金属铜。薄层（≈0.1μm）的Cu ₂ O电化学沉积到Pt电极上，并置于掺杂有H ₂，O ₂或CH _4的电容耦合氦等离子体中气体。非原位拉曼光谱用于探测等离子体处理对沉积的氧化铜层的影响。我们表明，在等离子体暴露过程中向Pt基板施加静态偏置电压可以控制氧化铜（I）膜的还原速率。我们提出还原过程是由等离子电子介导的，并且控制到表面的电子通量可以用作调节还原过程的一种手段。