Electronic structures are critical characteristics that determine the electrical, magnetic and optical properties of materials. With the capability of directly visualizing band dispersions and Fermi surfaces, angle-resolved photoemission spectroscopy (ARPES) has emerged as a powerful experimental tool to extract the electronic structures of materials and the coupling of these electronic structures to different degrees of freedom in crystal lattices. In the past three decades, advances in instrumentation and light sources have significantly improved the accuracy and efficiency of ARPES experiments. These advances have enabled the application of ARPES in novel material systems to aid our understanding of their physical properties and behaviours. In this Review, we give a brief introduction to the principles of ARPES and outline its applications in different material systems, with a focus on topological quantum materials and transition metal dichalcogenides.

电子结构是决定材料电，磁和光学特性的关键特性。具有直接可视化带状色散和费米表面的能力，角分辨光发射光谱法（ARPES）已成为一种强大的实验工具，可以提取材料的电子结构并将这些电子结构耦合到晶格中的不同自由度。在过去的三十年中，仪器和光源的进步显着提高了ARPES实验的准确性和效率。这些进步使ARPES在新型材料系统中的应用有助于我们对其物理性质和行为的理解。在这篇评论中，