The 2 μm wavelength band has become a promising candidate to be the next communication window. We demonstrate high-speed modulators based on a 220 nm silicon-on-insulator platform working at a wavelength of 1950 nm, using the free carrier plasma dispersion effect in silicon. A Mach–Zehnder interferometer modulator and a microring modulator have been characterized. At 1950 nm, the carrier-depletion modulator operates at a data rate of 20 Gbit/s with an extinction ratio of 5.8 dB and insertion loss of 13 dB. The modulation efficiency (${\mathrm{V}}_{\pi }·{\mathrm{L}}_{\pi }$) is 2.68 V·cm at 4 V reverse bias. The device operation is broadband, and we also characterize its performance at 1550 nm. At 1550 nm, an open eye is obtained at 30 Gbit/s. The difference in bandwidth is caused by the bandwidth limit of the 2 μm measurement setup. We also show a ring modulator paired with a low power integrated driver working in hybrid carrier depletion and injection mode at a data rate of 3 Gbit/s with power consumption of 2.38 pJ/bit in the 2 μm wavelength range. This work is a proof of principle demonstration and paves a route toward a full silicon-based transceiver in the 2 μm window.

中文翻译：

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波长范围为2μm的高速硅调制器

2μm波段已成为下一个通信窗口的有希望的候选者。我们演示了基于220 nm绝缘体上硅平台的高速调制器，该平台在1950 nm的波长下工作，利用了硅中的自由载流子等离子体弥散效应。马赫-曾德尔干涉仪调制器和微环调制器已被表征。在1950 nm处，载流子耗尽调制器以20 Gbit / s的数据速率工作，消光比为5.8 dB，插入损耗为13 dB。调制效率（${\mathrm{伏特}}_{\pi }·{\mathrm{大号}}_{\pi }$）在4 V反向偏置下为2.68 V·cm。该设备的操作是宽带的，我们还表征了其在1550 nm处的性能。在1550 nm处，以30 Gbit / s的速度睁开眼睛。带宽差异是由2μm测量设置的带宽限制引起的。我们还展示了一个环形调制器与一个低功率集成驱动器配对，该驱动器以3 Gbit / s的数据速率在混合载波耗尽和注入模式下工作，在2μm波长范围内的功耗为2.38 pJ / bit。这项工作是原理验证的证明，并为通向2μm窗口中完整的基于硅的收发器铺平了道路。