Optical excitation and subsequent decay of graphene plasmons can produce a significant increase in charge-carrier temperature. An efficient method to convert this temperature elevation into electrical signals can enable important mid-infrared applications. However, the modest thermoelectric coefficient and weak temperature dependence of carrier transport in graphene hinder this goal. Here, we demonstrate mid-infrared graphene detectors consisting of arrays of plasmonic resonators interconnected by quasi-one-dimensional nanoribbons. Localized barriers associated with disorder in the nanoribbons produce a dramatic temperature dependence of carrier transport, thus enabling the electrical detection of plasmon decay in the nearby graphene resonators. Our device has a subwavelength footprint of 5 × 5 μm² and operates at 12.2 μm with an external responsivity of 16 mA W^–1 and a low noise-equivalent power of 1.3 nW Hz^–1/2 at room temperature. It is fabricated using large-scale graphene and possesses a simple two-terminal geometry, representing an essential step towards the realization of an on-chip graphene mid-infrared detector array.

石墨烯等离子体激元的光激发和随后的衰变会导致载流子温度显着升高。将这种温度升高转换成电信号的有效方法可以实现重要的中红外应用。但是，石墨烯载流子的适度热电系数和较弱的温度依赖性阻碍了这一目标。在这里，我们演示了中红外石墨烯探测器，该探测器由通过准一维纳米带互连的等离子共振器阵列组成。与纳米带中的无序相关联的局部势垒产生了载流子传输的显着温度依赖性，从而使得能够电检测附近的石墨烯谐振器中的等离子体激元衰减。我们的装置具有5×5微米的亚波长足迹²并在室温下以12.2μm的功耗运行，外部响应率为16 mA W ^–1，低噪声等效功率为1.3 nW Hz ^–1/2。它是使用大规模石墨烯制造的，具有简单的两个端子几何形状，代表着朝着实现片上石墨烯中红外探测器阵列迈出的重要一步。