Phase boundaries and composition design were explored to achieve both high piezoelectricity and favorable temperature stability in potassium-sodium niobate ceramics, using (1-x)(K,Na)(Nb,Sb)O₃-xBi(Na,K)(Zr,Sn,Hf)O₃ ceramics. A rhombohedral-tetragonal (R-T) phase boundary was constructed at x=0.035–0.04 by co-doping with Sb⁵⁺ and Bi(Na,K)(Zr,Sn,Hf)O₃. More importantly, a superior temperature stability was observed in the ceramics with x=0.035, accompanying with a stable unipolar strain at room temperature to 100 °C. The ceramics with x=0.035 also exhibited improved piezoelectric properties (e.g., piezoelectric coefficient d₃₃∼465 pC/N and electromechanical coupling factor k_p=0.47) and Curie temperature (T_c∼240 °C). The Rietveld refinement and in-situ temperature-dependent piezoresponse force microscopy (PFM) results indicated that the enhancement of the piezoelectric properties was caused by the easy domain switching, high tetragonal fraction, and tetragonality, while the improved temperature stability mainly originated from the stable domain structures.

探索了使用（1- x）（K，Na）（Nb，Sb）O ₃ - x Bi（Na，K）（ Zr，Sn，Hf）O ₃陶瓷。通过与Sb ⁵⁺和Bi（Na，K）（Zr，Sn，Hf）O ₃共掺杂，在x = 0.035–0.04处构建了菱形四边形（RT）相边界。更重要的是，在x = 0.035的陶瓷中观察到了优异的温度稳定性，并伴随着室温至100°C的稳定单极性应变。x = 0.035的陶瓷也表现出改善的压电性能（例如。，压电系数d ₃₃ ~465 PC / N和机电耦合系数ķ _p = 0.47）和居里温度（Ť _ç ~240℃）。Rietveld改进和原位温度依赖性压电响应力显微镜（PFM）结果表明，压电性能的增强是由于易于域切换，高四方分数和四方性引起的，而改进的温度稳定性主要来自稳定的域结构。