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Ferroelectric and dielectric behaviors of sol-gel derived perovskite PMN-PT/PZT heterostructures via compositional development: An interface-dependent study
Journal of the European Ceramic Society ( IF 5.8 ) Pub Date : 2018-08-20 , DOI: 10.1016/j.jeurceramsoc.2018.08.023
Huiting Sui , Huajun Sun , Xiaofang Liu , Dingguo Zhou , Renxin Xu

Phase-pure perovskite 0.67Pb(Mg1/3Nb2/3)O3-0.33PbTiO3/Pb(Zr0.52Ti0.48)O3 (PMN-PT/PZT) heterostructures were prepared via compositional development using a sol-gel route. Interface-dependent microstructure, insulating, ferroelectric and dielectric performance were investigated. Relatively enhanced ferroelectricity (Pr = 21.81 μC/cm2, Ec = 61.88 kV/cm) and dielectricity (εr = 1959, tanδ = 0.0152) were obtained for the heterostructure with the maximum number of interfaces (7 interfaces, namely F-7 type). Presumably, this behavior is due to the reduced leakage current density (10−9–10−8 A/cm2 at ±400 kV/cm), which arises from columnar grain growth mode with more depletion layers generated between different compositions acting as a potential barrier for the movement of free carriers. A simplified equivalent circuit is used to provide a comprehensive explanation of the enhanced performance mechanism. These results highlight inherent issues in designing structures with specific interfaces and provide a new approach for designing high-performance PMN-PT-based thin film.



中文翻译:

溶胶凝胶衍生钙钛矿PMN-PT / PZT异质结构通过成分发展的铁电和介电行为:依赖于界面的研究

通过使用溶胶-凝胶的成分显影法制备了纯相钙钛矿0.67Pb(Mg 1/3 Nb 2/3)O 3 -0.33PbTiO 3 / Pb(Zr 0.52 Ti 0.48)O 3(PMN-PT / PZT)异质结构路线。研究了与界面有关的微观结构,绝缘,铁电和介电性能。相对地提高铁电性(P - [R  = 21.81μC/厘米2ê Ç  = 61.88千伏/厘米)和介电性(ε ř 对于具有最大界面数(7个界面,即F-7型)的异质结构,获得了= 1959,tanδ= 0.0152)。据推测,此行为是由于泄漏电流密度降低(在±400 kV / cm时为10 -9 –10 -8 A / cm 2)引起的,这是由于柱状晶粒生长模式引起的,在不同成分之间产生了更多的耗尽层,从而引起了漏电。自由承运人运动的潜在障碍。简化的等效电路用于提供增强性能机制的全面说明。这些结果突出了设计具有特定接口的结构中的固有问题,并为设计高性能基于PMN-PT的薄膜提供了一种新方法。

更新日期:2018-08-20
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