Phase-pure perovskite 0.67Pb(Mg_1/3Nb_2/3)O₃-0.33PbTiO₃/Pb(Zr_0.52Ti_0.48)O₃ (PMN-PT/PZT) heterostructures were prepared via compositional development using a sol-gel route. Interface-dependent microstructure, insulating, ferroelectric and dielectric performance were investigated. Relatively enhanced ferroelectricity (P_r = 21.81 μC/cm², E_c = 61.88 kV/cm) and dielectricity (ε_r = 1959, tanδ = 0.0152) were obtained for the heterostructure with the maximum number of interfaces (7 interfaces, namely F-7 type). Presumably, this behavior is due to the reduced leakage current density (10⁻⁹–10⁻⁸ A/cm² at ±400 kV/cm), which arises from columnar grain growth mode with more depletion layers generated between different compositions acting as a potential barrier for the movement of free carriers. A simplified equivalent circuit is used to provide a comprehensive explanation of the enhanced performance mechanism. These results highlight inherent issues in designing structures with specific interfaces and provide a new approach for designing high-performance PMN-PT-based thin film.

通过使用溶胶-凝胶的成分显影法制备了纯相钙钛矿0.67Pb（Mg _1/3 Nb _2/3）O ₃ -0.33PbTiO ₃ / Pb（Zr _0.52 Ti _0.48）O ₃（PMN-PT / PZT）异质结构路线。研究了与界面有关的微观结构，绝缘，铁电和介电性能。相对地提高铁电性（P _{- [R}  = 21.81μC/厘米²，ê _Ç  = 61.88千伏/厘米）和介电性（ε _ř 对于具有最大界面数（7个界面，即F-7型）的异质结构，获得了= 1959，tanδ= 0.0152）。据推测，此行为是由于泄漏电流密度降低（在±400 kV / cm时为10 ^-9 –10 ^-8 A / cm ²）引起的，这是由于柱状晶粒生长模式引起的，在不同成分之间产生了更多的耗尽层，从而引起了漏电。自由承运人运动的潜在障碍。简化的等效电路用于提供增强性能机制的全面说明。这些结果突出了设计具有特定接口的结构中的固有问题，并为设计高性能基于PMN-PT的薄膜提供了一种新方法。