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Directional lasing in resonant semiconductor nanoantenna arrays
Nature Nanotechnology ( IF 38.1 ) Pub Date : 2018-08-20 , DOI: 10.1038/s41565-018-0245-5
Son Tung Ha , Yuan Hsing Fu , Naresh Kumar Emani , Zhenying Pan , Reuben M. Bakker , Ramón Paniagua-Domínguez , Arseniy I. Kuznetsov

High-index dielectric and semiconductor nanoparticles supporting strong electric and magnetic resonances have drawn significant attention in recent years. However, until now, there have been no experimental reports of lasing action from such nanostructures. Here, we demonstrate directional lasing, with a low threshold and high quality factor, in active dielectric nanoantenna arrays achieved through a leaky resonance excited in coupled gallium arsenide (GaAs) nanopillars. The leaky resonance is formed by partially breaking a bound state in the continuum generated by the collective, vertical electric dipole resonances excited in the nanopillars for subdiffractive arrays. We control the directionality of the emitted light while maintaining a high quality factor (Q = 2,750). The lasing directivity and wavelength can be tuned via the nanoantenna array geometry and by modifying the gain spectrum of GaAs with temperature. The obtained results provide guidelines for achieving surface-emitting laser devices based on active dielectric nanoantennas that are compact and highly transparent.



中文翻译:

共振半导体纳米天线阵列中的定向激射

近年来,支持强电和磁共振的高折射率电介质和半导体纳米粒子引起了极大的关注。然而,直到现在,还没有来自这种纳米结构的激光作用的实验报道。在这里,我们展示了通过耦合砷化镓(GaAs)纳米柱中的泄漏共振激发的有源介电纳米天线阵列中具有低阈值和高品质因数的定向激射。泄漏共振是通过部分破坏连续光谱中的束缚状态而形成的,该连续光谱是由在亚衍射阵列的纳米柱中激发的集体垂直电子偶极子共振产生的。我们控制发射光的方向性,同时保持高品质因数(Q = 2,750)。可以通过纳米天线阵列的几何形状以及通过随温度改变GaAs的增益谱来调整激光的指向性和波长。获得的结果为实现基于紧凑且高度透明的有源介电纳米天线的表面发射激光器装置提供了指导。

更新日期:2018-12-10
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