Abstract Semiconductor photoelectrochemistry (PEC) technology has attracted wide interest as it not only reveals the photoelectric properties of advanced materials, but also promotes energy conversion from the sunlight based on these materials. Herein, we investigated photoelectric properties of annealed and unannealed liquid phase exfoliated few-layer molybdenum disulfide (MoS 2 ) photoelectrodes by PEC measurement. The linear sweep voltammograms and photoelectric response I-t curves demonstrate enhanced performance of MoS 2 films after annealing. Nyquist impedance and Bode phase plots demonstrate a higher charge transfer property and a longer charge lifetime after annealing. The enhancement due to annealing could come from the increase of the crystalline and compact density of MoS 2 nano-sheets, which is proved by X-ray diffraction and Raman spectroscopy in line with the absorption spectroscopy. Our results pave the way for the improvement of two-dimensional material based photoanodes for high performance of PEC applications by a simple method.

中文翻译：

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通过退火提高 MoS2 光电极的光电性能

摘要 半导体光电化学（PEC）技术不仅揭示了先进材料的光电特性，而且促进了基于这些材料的太阳光能量转换，因此引起了广泛的关注。在此，我们通过 PEC 测量研究了退火和未退火的液相剥离少层二硫化钼 (MoS 2 ) 光电极的光电性能。线性扫描伏安图和光电响应It曲线证明了退火后MoS 2 薄膜的性能增强。Nyquist 阻抗和 Bode 相位图表明退火后具有更高的电荷转移特性和更长的电荷寿命。退火引起的增强可能来自于 MoS 2 纳米片的结晶密度和致密密度的增加，X 射线衍射和拉曼光谱证明与吸收光谱一致。我们的结果为通过简单的方法改进基于二维材料的光电阳极以实现 PEC 应用的高性能铺平了道路。