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Tabula Rasa for n‐Cz silicon‐based photovoltaics
Progress in Photovoltaics ( IF 8.0 ) Pub Date : 2018-08-14 , DOI: 10.1002/pip.3068 Vincenzo LaSalvia 1 , Amanda Youssef 2 , Mallory A. Jensen 2 , Erin E. Looney 2 , William Nemeth 1 , Matthew Page 1 , Wooseok Nam 3 , Tonio Buonassisi 2 , Paul Stradins 1
Progress in Photovoltaics ( IF 8.0 ) Pub Date : 2018-08-14 , DOI: 10.1002/pip.3068 Vincenzo LaSalvia 1 , Amanda Youssef 2 , Mallory A. Jensen 2 , Erin E. Looney 2 , William Nemeth 1 , Matthew Page 1 , Wooseok Nam 3 , Tonio Buonassisi 2 , Paul Stradins 1
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High‐temperature annealing, known as Tabula Rasa (TR), proves to be an effective method for dissolving oxygen precipitate nuclei in n‐Cz silicon and makes this material resistant to temperature‐induced and process‐induced lifetime degradation. Tabula Rasa is especially effective in n‐Cz wafers with oxygen concentration >15 ppma. Vacancies, self‐interstitials, and their aggregates result from TR as a metastable side effect. Temperature‐dependent lifetime spectroscopy reveals that these metastable defects have shallow energy levels ~0.12 eV. Their concentrations strongly depend on the ambient gases during TR because of an offset of the thermal equilibrium between vacancies and self‐interstitials. However, these metastable defects anneal out at typical cell processing temperatures ≥850°C and have little effect on the bulk lifetime of the processed cell structures. Without dissolving built‐in oxygen precipitate nuclei, high‐temperature solar cell processing severely degrades the minority carrier lifetimes to below 0.1 millisecond, while TR‐treated n‐Cz wafers after the cell processing steps exhibit carrier lifetimes above 2.2 milliseconds.
中文翻译：
Tabula Rasa，用于n-Cz硅基光伏
事实证明，称为Tabula Rasa（TR）的高温退火是一种将氧沉淀核溶解在n- Cz硅中的有效方法，并使这种材料具有抗温度和寿命降低的作用。白板是特别有效ñ氧浓度> 15 ppma的Cz晶片。空缺，自我插页式广告及其集合体是由TR引起的，是亚稳态的副作用。温度相关的寿命光谱表明，这些亚稳缺陷的能量水平较低，约为0.12 eV。由于空位和自填隙之间的热平衡有所偏移，因此它们的浓度在TR期间强烈依赖于环境气体。但是，这些亚稳态缺陷在≥850°C的典型电池加工温度下会退火，并且对加工后的电池结构的整体寿命影响很小。在不溶解内置氧沉淀核的情况下，高温太阳能电池处理会严重降低少数载流子的寿命，使其低于0.1毫秒，而经TR处理的n电池处理步骤后的Cz晶片的载流子寿命超过2.2毫秒。
更新日期：2018-08-14
中文翻译：
Tabula Rasa，用于n-Cz硅基光伏
事实证明，称为Tabula Rasa（TR）的高温退火是一种将氧沉淀核溶解在n- Cz硅中的有效方法，并使这种材料具有抗温度和寿命降低的作用。白板是特别有效ñ氧浓度> 15 ppma的Cz晶片。空缺，自我插页式广告及其集合体是由TR引起的，是亚稳态的副作用。温度相关的寿命光谱表明，这些亚稳缺陷的能量水平较低，约为0.12 eV。由于空位和自填隙之间的热平衡有所偏移，因此它们的浓度在TR期间强烈依赖于环境气体。但是，这些亚稳态缺陷在≥850°C的典型电池加工温度下会退火，并且对加工后的电池结构的整体寿命影响很小。在不溶解内置氧沉淀核的情况下，高温太阳能电池处理会严重降低少数载流子的寿命，使其低于0.1毫秒，而经TR处理的n电池处理步骤后的Cz晶片的载流子寿命超过2.2毫秒。
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