Abstract Undoped and tantalum-doped titania (TiO2:Ta) films were synthesized via metalorganic chemical vapor deposition (MOCVD). The crystallization qualities, surface morphologies and optical properties of the deposited films were systematically characterized. The results indicated that the films having low doping levels were epitaxial anatase titania along [001] orientation with high transparency in visible region. The optical band gap could be modulated from 3.38 to 3.52 eV by controlling Ta doping levels. Ultraviolet (UV) photoelectric detectors with metal-semiconductor-metal (MSM) structure were designed and fabricated based on the undoped and Ta-doped films. The maximum spectral response of 32.3 A/W was detected at about 315 nm for the 1% Ta-doped TiO2 film-based detector. The detectors based on the undoped and 1% Ta-doped TiO2 films also presented good temporal responses and visible-blind characteristics, showing excellent UV light detection performances.

中文翻译：

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紫外光电探测器用外延 Ta 掺杂 TiO2 薄膜的沉积和表征

摘要 通过有机金属化学气相沉积 (MOCVD) 合成了未掺杂和掺杂钽的二氧化钛 (TiO2:Ta) 薄膜。系统地表征了沉积薄膜的结晶质量、表面形貌和光学性能。结果表明，具有低掺杂水平的薄膜是沿[001]取向的外延锐钛矿二氧化钛薄膜，在可见光区具有高透明度。通过控制 Ta 掺杂水平，可以将光学带隙从 3.38 eV 调制到 3.52 eV。基于未掺杂和掺杂 Ta 的薄膜，设计并制造了具有金属-半导体-金属 (MSM) 结构的紫外 (UV) 光电探测器。对于基于 1% Ta 掺杂的 TiO2 薄膜检测器，在约 315 nm 处检测到 32.3 A/W 的最大光谱响应。