Abstract In this study, a series of TiO2-based ceramics doped with different contents of Ho2O3 in the range of 0–0.6 mol% are prepared by means of a conventional solid-state reaction method. Phase composition, microstructure and element distribution are studied by use of X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDS) separately. The influence of sintering temperature and Ho2O3 on the properties of samples is explored. The results show that the breakdown voltage decreases continuously while both the nonlinear coefficient and the relative dielectric constant ascend firstly and then descend with the sintering temperature increasing. Meanwhile, the relative dielectric constant and nonlinear coefficient of samples firstly ascend and then descend with the increasing of Ho2O3. Although the minimum breakdown voltage (3.3 V/mm) is obtained when sample is sintered at 1450 °C, the sample doped with 0.45 mol% Ho2O3 sintered at 1400 °C exhibits high comprehensive electrical properties, with breakdown voltage of 6 V/mm, the nonlinear coefficient of 5.5 and the relative dielectric constant of 1.88 × 105.

中文翻译：

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烧结温度和Ho2O3对TiO2基压敏电阻性能的影响

摘要 在本研究中，采用常规固相反应方法制备了一系列掺杂 0-0.6 mol% 不同 Ho2O3 含量的 TiO2 基陶瓷。分别使用 X 射线衍射 (XRD)、扫描电子显微镜 (SEM) 和能量色散 X 射线光谱 (EDS) 研究相组成、微观结构和元素分布。探讨了烧结温度和Ho2O3对样品性能的影响。结果表明，随着烧结温度的升高，击穿电压不断降低，而非线性系数和相对介电常数均先上升后下降。同时，样品的相对介电常数和非线性系数随着Ho2O3的增加先上升后下降。