Anchoring Active Pt2+/Pt0 Hybrid Nanodots on g‐C3N4 Nitrogen Vacancies for Photocatalytic H2 Evolution,ChemSusChem

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Anchoring Active Pt2+/Pt0 Hybrid Nanodots on g‐C3N4 Nitrogen Vacancies for Photocatalytic H2 Evolution
ChemSusChem ( IF 7.5 ) Pub Date : 2018-08-21 , DOI: 10.1002/cssc.201801431
Weinan Xing _{1,

2} , Wenguang Tu ₁ , Man Ou ₁ , Shuyang Wu ₁ , Shengming Yin ₁ , Haojing Wang ₁ , Gang Chen ₂ , Rong Xu ₁

Affiliation

A Pt²⁺/Pt⁰ hybrid nanodot‐modified graphitic carbon nitride (CN) photocatalyst (CNV‐P) was fabricated for the first time using a chemical reduction method, during which nitrogen vacancies in g‐C₃N₄ assist to stabilize Pt²⁺ species. It is elucidated that the coexistence of metallic Pt⁰ and Pt²⁺ species in the Pt nanodots loaded on g‐C₃N₄ results in superior photocatalytic H₂ evolution performance with very low Pt loadings. The turnover frequencies (TOFs) are 265.91 and 116.38 h⁻¹ for CNV‐P‐0.1 (0.1 wt % Pt) and CNV‐P‐0.5 (0.5 wt % Pt), respectively, which are much higher than for other g‐C₃N₄‐based photocatalysts with Pt co‐catalyst reported previously. The excellent photocatalytic H₂ evolution performance is a result of i) metallic Pt⁰ facilitating the electron transport and separation and Pt²⁺ species preventing the undesirable H₂ backward reaction, ii) the strong interfacial contact between Pt²⁺/Pt⁰ hybrid nanodots and nitrogen vacancies of CNV facilitating the interfacial electron transfer, and iii) the highly dispersed Pt²⁺/Pt⁰ hybrid nanodots exposing more active sites for photocatalytic H₂ evolution. Our findings are useful for the design of highly active semiconductor‐based photocatalysts with extremely low precious metal content to reduce the catalyst cost while achieving good activity.

中文翻译：

在g-C3N4氮空位上固定活性Pt2 + / Pt0杂化纳米点以光催化H2的逸出

Pt ²⁺ / Pt ⁰杂化纳米点改性石墨碳氮化物（CN）光催化剂（CNV-P）首次使用化学还原方法制备，其间g-C ₃ N _4中的氮空位有助于稳定Pt ²⁺种。阐明了在g‐C ₃ N ₄上负载的Pt纳米点中金属Pt ⁰和Pt ²⁺物种的共存会导致在极低的Pt负载下具有优异的光催化H ₂析出性能。周转频率（TOF）为265.91和116.38 h ^-1CNV‐P‐0.1（0.1 wt％Pt）和CNV‐P‐0.5（0.5 wt％Pt）的含量分别远高于之前报道的其他基于g‐C ₃ N ₄的含Pt助催化剂的光催化剂。优异的光催化H ₂放出性能是由于以下原因：i）金属Pt ⁰促进电子传输和分离，Pt ²⁺物种防止了不良的H ₂反向反应，ii）Pt ²⁺ / Pt ⁰杂化纳米点之间的牢固界面接触和CNV的氮空位有利于界面电子转移，并且iii）高度分散的Pt ²⁺ / Pt ⁰杂化纳米点暴露出更多的光催化H ₂进化活性位点。我们的发现可用于设计具有极低贵金属含量的高活性半导体基光催化剂，以降低催化剂成本并实现良好的活性。

更新日期：2018-08-21

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