Challenges facing copper‐plated metallisation for silicon photovoltaics: Insights from integrated circuit technology development,Progress in Photovoltaics

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Challenges facing copper‐plated metallisation for silicon photovoltaics: Insights from integrated circuit technology development
Progress in Photovoltaics ( IF 8.0 ) Pub Date : 2018-08-08 , DOI: 10.1002/pip.3062
Alison Lennon ₁ , Jack Colwell ₁ , Kenneth P. Rodbell ₂

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Copper‐plated interconnects were widely adopted for volume manufacture of integrated circuits after more than a decade of intensive research to demonstrate that use of Cu would not impact device reliability. However, although Cu‐plated metallisation promises significantly reduced costs for Si photovoltaics, its adoption in manufacturing has not gained the same traction. This review identifies some key challenges facing the introduction of Cu‐plated metallisation for Si photovoltaics. These include the following: (1) increased carrier recombination due to the use of Cu for metal contact formation; (2) reduced module reliability due to adhesion or contact integrity failures; and (3) limited availability of cost‐effective processes and equipment for metal plating. For integrated circuits, Cu's low electrical resistance and high resistance to electromigration provided an impetus for the large investment in process development that was required to realise Cu‐plated interconnects. However, the technical advantages of using Cu for Si solar cell contacts are not as compelling, as solar cells can tolerate larger feature sizes thus reducing the criticality of the contact metal's conductivity and electromigration properties. Additionally, for Si photovoltaics, low cost is paramount, and new challenges arise from the need for modules to absorb light and operate in the field for 25+ years in diverse outdoor climates. However, with the scale of Si photovoltaic manufacturing expected to increase dramatically in the next decade, the use of large quantities of silver for cell metallisation will provide an incentive to address reliability concerns regarding the use of Cu for Si photovoltaic metallisation.

中文翻译：

硅光伏电池镀铜金属化面临的挑战：集成电路技术发展的真知灼见

经过十多年的深入研究，证明铜的使用不会影响器件的可靠性，镀铜互连被广泛用于集成电路的批量生产。但是，尽管镀铜金属化有望显着降低Si光伏产品的成本，但其在制造中的采用并未获得同样的吸引力。这篇综述指出了为Si光伏技术引入镀铜金属化所面临的一些关键挑战。其中包括：（1）由于使用Cu进行金属接触而增加了载流子复合；（2）由于粘附或接触完整性故障而降低了模块可靠性；（3）具有成本效益的金属电镀工艺和设备的可用性有限。对于集成电路，Cu' 低电阻和高耐电迁移性为实现镀铜互连所需的大量工艺开发提供了动力。但是，将Cu用于Si太阳能电池触点的技术优势并不那么引人注目，因为太阳能电池可以忍受更大的特征尺寸，从而降低了触点金属的电导率和电迁移特性的关键性。此外，对于硅光伏电池而言，低成本至高无上，并且对模块的需求也面临着新的挑战，这些模块需要吸收光并在不同的室外气候条件下在野外工作25年以上。但是，由于预计未来十年内硅光伏制造的规模将急剧增加，

更新日期：2018-08-08

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