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Switching by topological insulators
Nature Materials ( IF 37.2 ) Pub Date : 2018-07-30 , DOI: 10.1038/s41563-018-0146-x
Chi-Feng Pai

Switching by topological insulators

Switching by topological insulators, Published online: 30 July 2018; doi:10.1038/s41563-018-0146-x

Magnetization in magnetoresistive memory devices can be controlled at room temperature by spin–orbit torques originating from the surface states of topological insulators.


中文翻译:

通过拓扑绝缘子进行切换

通过拓扑绝缘子进行切换

通过拓扑绝缘子进行切换,在线发布:2018年7月30日; doi:10.1038 / s41563-018-0146-x

磁阻存储设备中的磁化可以在室温下通过源自拓扑绝缘体表面状态的自旋轨道转矩来控制。
更新日期:2018-07-31
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