The combined effect of heating and forward bias voltage, that is, heat‐bias soaking (HBS) on cesium fluoride (CsF)‐free and CsF‐treated Cu(In_1‐xGa_x)Se₂ (CIGS) solar cells using chemical bath deposition‐cadmium sulfide (CBD‐CdS) buffer layer was investigated with varying the heating temperature, bias voltage, and biasing time. Heat bias soaking followed by heat soaking (HS) (ie, HBS/HS) treatments improved the open‐circuit voltage (V_OC) and conversion efficiency for the CsF‐treated CIGS solar cell, whereas such a beneficial effect was not observed for CsF‐free CIGS solar cells. Capacitance‐voltage measurement confirmed the significantly increased carrier concentration (N_CV) after HBS for the CsF‐CIGS solar cell, which is one of the possible reasons for the increased V_OC. Because of the extremely high N_CV, the short‐circuit current density (J_SC) decreased owing to the narrower depletion width. However, the high N_CV could be tuned to an appropriate value via a subsequent moderate heating procedure without biasing. As a result, the J_SC loss was reduced, thereby improving the cell efficiency. These results open a new route to improve the efficiency of alkali‐treated CIGS solar cells.

中文翻译：

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热偏压浸泡对氟化铯处理的CIGS薄膜太阳能电池的影响

加热和正向偏置电压的综合作用，即使用化学试剂对无氟化铯（CsF）和经CsF处理的Cu（In _1-x Ga _x）Se ₂（CIGS）太阳能电池的热偏压浸泡（HBS）通过改变加热温度，偏置电压和偏置时间，研究了镀液沉积-硫化镉（CBD-CdS）缓冲层。热偏置浸泡后再进行热浸泡（HS）（即HBS / HS）处理，可以改善CsF处理的CIGS太阳能电池的开路电压（V _OC）和转换效率，而CsF则未观察到这种有益效果-无CIGS太阳能电池。电容电压测量证实载流子浓度显着增加（N _CV）之后的CsF-CIGS太阳能电池HBS，这是V _OC增加的可能原因之一。由于N _CV极高，由于耗尽宽度变窄，短路电流密度（J _SC）降低。但是，可以通过随后的适度加热程序将高N _CV调整到适当的值，而不会产生偏差。结果，减少了J _SC损失，从而提高了电池效率。这些结果为提高碱处理的CIGS太阳能电池的效率开辟了一条新途径。