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Resonant excitation of quantum emitters in gallium nitride
Optica ( IF 10.4 ) Pub Date : 2018-07-30 , DOI: 10.1364/optica.5.000932
Mehran Kianinia , Carlo Bradac , Minh Nguyen , Tongtong Zhu , Milos Toth , Rachel Oliver , Igor Aharonovich

We demonstrate resonant excitation of quantum emitters in gallium nitride (GaN). The emitters are stable under non-resonant excitation and exhibit nearly Fourier-transform-limited lines of 250 MHz under coherent excitation, the narrowest reported to date for GaN.

中文翻译:

氮化镓中量子发射体的共振激发

我们展示了氮化镓(GaN)中量子发射器的共振激发。发射器在非谐振激发下稳定,并表现出几乎傅立叶变换的限制线。250 兆赫 在相干激发下,这是迄今为止报道的最窄的GaN。
更新日期:2018-08-20
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