Semiconductor nano-lasers grown on silicon and emitting at the telecom bands are advantageous ultra-compact coherent light sources for potential Si-based photonic integrated circuit applications. However, realizing room-temperature lasing inside nano-cavities at telecom bands is challenging and has only been demonstrated up to the E band. Here, we report on InP/InGaAs nano-ridge lasers with emission wavelengths ranging from the O, E, and S bands to the C band operating at room temperature with ultra-low lasing thresholds. Using a cycled growth procedure, ridge InGaAs quantum wells inside InP nano-ridges grown on patterned (001) Si substrates are designed as active gain materials. Room-temperature lasing at the telecom bands is achieved by transferring the InP/InGaAs nano-ridges onto a ${\mathrm{SiO}}_2/\mathrm{Si}$ substrate for optical excitation. We also show that the operation wavelength of InP/InGaAs nano-lasers can be adjusted by altering the excitation power density and the length of the nano-ridges formed in a single growth run. These results indicate the excellent optical properties of the InP/InGaAs nano-ridges grown on (001) Si substrates and pave the way towards telecom InP/InGaAs nano-laser arrays on CMOS standard Si or silicon-on-insulator substrates.

中文翻译：

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在Si上生长并在电信频段发射的室温InP / InGaAs纳米脊激光器

生长在硅上并在电信频段发射的半导体纳米激光器是潜在的基于Si的光子集成电路应用的超紧凑相干光源。但是，在电信频段的纳米腔内实现室温激光发射具有挑战性，并且仅在E频段之前就得到了证明。在这里，我们报道了InP / InGaAs纳米脊激光器，其发射波长范围从O，E和S波段到在室温下以超低激光阈值工作的C波段。使用循环生长程序，将在图案化（001）Si衬底上生长的InP纳米脊内部的脊InGaAs量子阱设计为有源增益材料。通过将InP / InGaAs纳米脊转移到一个${\mathrm{二氧化硅}}_{\mathrm{2个}}/硅$用于光激发的衬底。我们还表明，可以通过改变激发功率密度和单个生长过程中形成的纳米脊的长度来调整InP / InGaAs纳米激光的工作波长。这些结果表明，在（001）Si衬底上生长的InP / InGaAs纳米脊具有出色的光学性能，为在CMOS标准Si或绝缘体上硅衬底上的电信InP / InGaAs纳米激光阵列铺平了道路。