Large-scale transfer-free growth of thin graphite films at low temperature for solid diffusion barriers†,Nanoscale

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Large-scale transfer-free growth of thin graphite films at low temperature for solid diffusion barriers†
Nanoscale ( IF 5.8 ) Pub Date : 2018-07-20 00:00:00 , DOI: 10.1039/c8nr03842b
Su Hyoung Kang _{1,

2,

3,

4,

5} , Sangmin Kang _{1,

2,

3,

4,

5} , Seong Chae Park _{3,

5,

6,

7} , Jong Bo Park _{1,

2,

3,

4,

5} , Youngjin Jung _{1,

2,

3,

4,

5} , Byung Hee Hong _{1,

2,

3,

4,

5}

Affiliation

Amorphous indium–gallium–zinc oxide (a-IGZO) thin-film transistors (TFTs) have been under intense investigation as one of the promising candidates for active matrix flat-panel displays. However, solid diffusion of a-IGZO to other layers during TFT device fabrication highly degrades their electrical and optical properties. It is expected that the diffusion-impenetrable properties of graphitic materials can be utilized as diffusion barriers. A conventional transfer method and direct growth on TFTs with high temperature are limited due to wet transfer conditions and low T_g (∼540 °C) of the glass substrates, respectively. Here we report the large-scale transfer-free growth of thin graphite films at low temperature (∼350 °C) for solid diffusion barriers in the a-IGZO TFTs using plasma enhanced chemical vapor deposition (PECVD), which can be widely used to protect solid-diffusion for sustainable and scalable future industrial technology.

中文翻译：

低温下可大规模扩散形成无石墨薄膜，从而形成固体扩散阻挡层†

非晶铟镓锌氧化物（a-IGZO）薄膜晶体管（TFT）已作为有源矩阵平板显示器的有前途的候选之一而受到了广泛的研究。然而，在TFT器件制造期间，a-IGZO向其他层的固体扩散极大地降低了它们的电学和光学特性。期望可以将石墨材料的不可渗透的特性用作扩散阻挡层。由于湿转移条件和低T _g，传统的转移方法和在高温TFT上的直接生长受到限制（〜540°C）的玻璃基板。在这里，我们报道了使用等离子增强化学气相沉积（PECVD）在a-IGZO TFT中的固态扩散阻挡层在低温（〜350°C）下大规模石墨薄膜的无转移生长，该方法可广泛用于保护固体扩散，以实现可持续和可扩展的未来工业技术。

更新日期：2018-07-20

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